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Analysis of Nanoscale Deformation in GaAs(100): Towards Patterned Growth of Quantum Dots

Published online by Cambridge University Press:  01 February 2011

Curtis R. Taylor ,
Eric A. Stach ,
Ajay P. Malshe  and
Gregory Salamo
Curtis R. Taylor
Affiliation:
Department of Physics, Microelectronics-photonics Program, University of Arkansas, Fayetteville, AR 72703, U.S.A; email: curtis.taylor@uark.edu
Eric A. Stach
Affiliation:
National Center for Electron Microscopy, Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, U.S.A. Department of Mechanical Engineering, Microelectronics-photonics Program, University of Arkansas, Fayetteville, AR 72703, U.S.A.; email: apm2@engr.uark.edu
Ajay P. Malshe
Affiliation:
Department of Physics, University of Arkansas, Fayetteville, AR 72703, U.S.A.
Gregory Salamo
Affiliation:
Present address: School of Materials Engineering, Purdue University, West Lafayette, IN 47907, U.S.A.
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Abstract

Nanoindentations were created in the GaAs(100) surface to act as strain centers for the controlled nucleation and patterning of InAs quantum dots. A systematic approach is taken to understand the indent deformation processes that may lead to precision patterning capabilities for a broad range of nanostructures. Indents were generated using loads below 450 μN with a sharp cube corner indenter. Site-specific cross-sectional thinning of nanoindents (down to 100 nm in size) has been achieved using the in-situ ‘lift-out’ technique. This allowed for observation of subsurface deformation by transmission electron microscopy (TEM). The crystal was observed to deform solely by dislocation activity with no evidence of amorphization, twinning, fracture, or phase transformation. It is shown that the single phase deformation of GaAs can be well characterized and controlled, which should allow for exploitation of the dislocation strain field to bias nucleation of self-assembled quantum dots.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 864: Symposium E – Semiconductor Defect Engineering-Materials, Synthesis Structures and Devices , 2005 , E5.7
Copyright
Copyright © Materials Research Society 2005

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