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Analysis of Oxygen Gettering and Dislocation Locking in Silicon

Published online by Cambridge University Press:  26 February 2011

Dimitrios Maroudas  and
Robert A. Brown
Dimitrios Maroudas
Affiliation:
Massachusetts Institute of Technology, Department of Chemical Engineering, Cambridge, MA 02139
Robert A. Brown
Affiliation:
Massachusetts Institute of Technology, Department of Chemical Engineering, Cambridge, MA 02139
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Abstract

The motion under an applied stress of dislocations in silicon crystals is slowed and stopped by the presence of oxygen inthe material. A model is presented that quantitatively describes the inhibition of dislocation motion by accounting for the oxygen gettering to dislocations caused by diffusion and stress-enhanced migration. Drag on the dislocation motion ismodelled using the elastic interactions between the interstitial oxygen and the dislocation and the energy needed to breakbonds formed between silicon and aggregated oxygen atoms within the dislocation core. The predictions of the model agree quantitatively with the experimental data of Imai and Sumino.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 209: Symposium K – Defects in Materials , 1990 , 597
Copyright
Copyright © Materials Research Society 1991

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References

1. Sumino, K., in Defects and Properties of Semiconductors : Defect Engineering, edited by Chikawa, J., Sumino, K., and Wada, K. (KTK Scientific Publishers, Tokyo, 1987), p.227.CrossRefGoogle Scholar
2. Alexander, H., and Haasen, P., Sol. Stat. Phys., 22, 27 (1968)Google Scholar
3. Maroudas, D., and Brown, R. A., J. App. Phys., in review (1990)Google Scholar
4. Cottrell, A. H., and Jawson, M. A., Proc. Roy. Soc. London, A199, 104 (1949).Google Scholar
5. Needels, M., Joannopoulos, J. D., Bar-Yam, Y., and Pantelides, S. T., Phys. Rev. B, to be published (1990)Google Scholar
6. Imai, M., and Sumino, K., Phil. Mag. A, 47, 599 (1983)Google Scholar
7. Sumino, K., and Imai, M., Phil. Mag. A, 47, 753 (1983)CrossRefGoogle Scholar
8. Maroudas, D., and Brown, R. A., in Impurities, Defects and Diffusion in Semiconductors : Bulk and Layered Structures, edited by Wolford, D. J., Bernholc, J., and Haller, E. E., (Mat. Res. Soc. Proc. 163, Pittsburgh, PA, 1990), pp. 615–620.Google Scholar
9. Maroudas, D., and Brown, R. A., Phys. Rev. B, in review (1990)Google Scholar
10. Nandedkar, S., and Narayan, J., Phil. Mag. A, 56, 625 (1987).CrossRefGoogle Scholar
11. Inoue, N., Wada, K., and Osaka, J., in Defects and Properties of Semiconductors : Defect Engineering, edited by Chikawa, J., Sumino, K., and Wada, K. (KTK Scientific Publishers, Tokyo, 1987), p. 197.CrossRefGoogle Scholar
12. Hirth, J. P., and Lothe, J., Theory of Dislocations, 2nd ed. (Wiley, New York, 1982), p. 91.Google Scholar