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Anisotropic Thermal Conductivity of A Si/Ge Superlattice

Published online by Cambridge University Press:  10 February 2011

T. Borca-Tasciuc
Affiliation:
Mechanical and Aerospace Engineering Department
D. Song
Affiliation:
Mechanical and Aerospace Engineering Department
J. L. Liu
Affiliation:
Department of Electrical Engineering University of California, Los Angeles, CA 90095–1597,
G. Chen
Affiliation:
Mechanical and Aerospace Engineering Department
K. L. Wang
Affiliation:
Department of Electrical Engineering University of California, Los Angeles, CA 90095–1597,
X. Sun
Affiliation:
Department of Physics
M. S. Dresselhaus
Affiliation:
Department of Physics Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology, Cambridge, MA 02139
T. Radetic
Affiliation:
Department of Materials Science and Mineral EngineeringUniversity of California, Berkeley, CA 94720
R. Gronsky
Affiliation:
Department of Materials Science and Mineral EngineeringUniversity of California, Berkeley, CA 94720
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Abstract

Experimental evidence for a significant thermal conductivity reduction have been reported in recent years for GaAs/AlAs, Si/Ge, and Bi 2Te3/Sb2Te3 superlattices. In this work, we present preliminary experimental results on the reduction of the in-plane and cross-plane thermal conductivity for a symmetric Si/Ge superlattice. A differential 2-wire 3ω method is developed to perform the anisotropic thermal conductivity measurements. In this technique, a patterned heater with a width much larger than the film thickness yields the cross-plane thermal conductivity of the film. The in-plane thin film thermal conductivity is inferred from the temperature rise of a narrow width heater that can create more heat spreading in the in-plane direction of the thin film. A differential method to measure the temperature drop across the film is employed in order to increase the accuracy of the measurement.

Type
Research Article
Copyright
Copyright © Materials Research Society 1999

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