Hostname: page-component-848d4c4894-jbqgn Total loading time: 0 Render date: 2024-07-01T13:28:40.036Z Has data issue: false hasContentIssue false
  • English
  • Français

Anomalous Point Defect Injection During Pulsed Laser Melting Processes: Direct Evidence of Gai and Asi Profiles in GaAs

Published online by Cambridge University Press:  15 February 2011

Yih Chang  and
Thomas W. Sigmon
Yih Chang
Affiliation:
Solid State Laboratory and Department of Electrical Engineering, Stanford University, Stanford, CA 94305
Thomas W. Sigmon
Affiliation:
Solid State Laboratory and Department of Electrical Engineering, Stanford University, Stanford, CA 94305
Get access

Abstract

Significant point defect injection during a pulsed laser melt process is reported for the first time. Heteroepitaxial InxGa1-xAs/GaAs layers fabricated by a pulsed laser induced epitaxy technique are used in this study. Transmission electron microscopy (TEM), energy-dispersive X-ray (EDX) and secondary ion mass spectrometry (SIMS) are employed to study the redistribution behavior of each species on the atomic scale. It is found that both the Si dopant species and the Ga, As, and In host atoms are injected into the underlying GaAs substrate. These species are then significantly redistributed, forming near spherical As-rich regions. Direct evidence of Asi and Gai (Ga and As interstitialcies) profiles in the GaAs substrate are also obtained for the first time. A hypothesis, based upon the combined effects of concentration impulse and large temperature gradients across the liquid-solid interface, is proposed to explain the significant solid phase diffusion observed during the pulsed laser melting process. We estimate the temperature gradient induced electric field during the process to be on the order of 104V/cm.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 230: Symposium R – Phase Transformation Kinetics in Thin Films , 1991 , 263
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Carey, P. G., Ph.D. Dissertation, Stanford University, Stanford, CA, 1988.Google Scholar
2 Chou, S. Y., Chang, Y., Weiner, K. H., Sigmon, T. W., and Parsons, J. D., Appl. Phys. Lett., 56, 530 (1990).Google Scholar
3 Abelson, J. R., Sigmon, T. W., Kim, K. B., and Weiner, K. H., Appl. Phys. Lett., 52, 230 (1988).Google Scholar
4 Chang, Y., Chou, S. Y., Sigmon, T. W., Marshall, A. F., and Weiner, K. H., Appl. Phys. Lett., 56, 1844 (1990).Google Scholar
5 Chang, Y., Sigmon, T. W., Marshall, A. F., and Weiner, K. H., “Thin Film Structures and Phase Stability”, in MRS Symposium Proceedings, edited by Clemens, B. M. and Johnson, W. L. (Materials Research Society, Pittsburgh, PA, 1990), Vol.187.Google Scholar
6 Chang, Y., Chou, S. Y., Kramer, J., Sigmon, T. W., Marshall, A. F., and Weiner, K. H., Appl. Phys. Lett., 58(19), 2150 (1991).Google Scholar
7 Fitzgerald, E. A. Jr., Ph.D. Dissertation, Cornell University, Ithaca, NY, 1988.Google Scholar
8 Landolt-Bornstein new series, III/17d and I1/17a (1984).Google Scholar
9 Lee, B.-T., Gronsky, R., and Bourret, E. D., J. Appl. Phys., 64, 114 (1988).Google Scholar
10 Sands, T., Washburn, J., and Gronsky, R., Mat. Lett., 3, 247 (1985).Google Scholar
11 Melloch, M. R., Otsuka, N., Woodall, J. M., Warren, A. C., and Freeouf, J. L., Appl. Phys. Lett., 57, 1531 (1990).Google Scholar
12 Panish, M. B., J. Electrochemical Soc., 113, 1226 (1966).Google Scholar
13 Tiller, W. A., Department of Materials Science and Engineering, Stanford University, private communication.Google Scholar
14 Blakemore, J. S.,J. Appl. Phys., 53(1), 520 (1982).Google Scholar
15 Deal, M. D., Center for Integrated System, Stanford University, private communication.Google Scholar
16 Chang, Y., Chen, J., Talwar, S., Shu, E. Y., and Sigmon, T. W., to be published in MRS Symposium Proceedings, edited by Chen, M., et. al. (Materials Research Society, Pittsburgh, PA, 1991), Vol.230.Google Scholar