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Antiferromagnetic Exchange Constants Between Mn2+ Ions in II-VI Semimagnetic Semiconductors

Published online by Cambridge University Press:  26 February 2011

R. L. Aggarwal
R. L. Aggarwal*
Affiliation:
Francis Bitter National Magnet Laboratory and Department of Physics Massachusetts Institute of Technology, Cambridge, MA 02139
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Abstract

Mn2+ ion spins in II–VI compound semimagnetic semiconductors (SMS) such as Cd1−xMn Te interact with one another through an antiferromagnetic exchange which is responsible for many interesting properties of Mn-alloyed II–VI SMS. In particular, this interaction leads to unique magnetization (M) behavior of SMS as a function of applied magnetic field (B). The nearest-neighbor (NN) Mn2+ −MN2+ interaction has been shown to yield a series of five steps in M vs. B curves above about 10 T, providing a direct determination of the NN exchange constant JNN. A detailed analysis of the magnetization steps has yielded values for the next NN exchange constant JNNN. The magnetization steps also yield information on the distribution of Mn2+ ions. Inelastic neutron scattering and Raman scattering provide alternative methods for the direct determination of the exchange constants.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 89: Symposium Q – Diluted Magnetic (Semimagnetic) Semiconductors , 1986 , 7
Copyright
Copyright © Materials Research Society 1987

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References

* Also, MIT Lincoln Laboratory, Lexington, MA 02173.Google Scholar
1. Galazka, R.R., Nagata, S., and Keesom, P.H., Phys. Rev. B22, 3344 (1980).Google Scholar
2. Oseroff, S., Phys. Rev. B25, 6484 (1982).Google Scholar
3. Novak, M.A., Symko, O.G., Zheng, D.J., and Oseroff, S., Phys. Rev. B29, 1310 (1984).Google Scholar
4. Denissen, C.J.M., Nishihara, H., Gool, J.C. van, and Jonge, W.J.M. de, Phys. Rev. B33, 7637 (1986).CrossRefGoogle Scholar
5. Golnik, A., Ginter, J., and Gaj, J.A., J. Phys. C: Solid State Phys. 16, 6073 (1983).Google Scholar
6. Heiman, D., Wolff, P.A., and Warnock, J., Phys. Rev. B27, 4848 (1983).Google Scholar
7. Wolff, P.A. and Ram-Mohan, L.R., this Proceedings.Google Scholar
8. Aggarwal, R.L., Jasperson, S.N., Shapira, Y., Foner, S., Sakakibara, T., Goto, T., Miura, N., Dwight, K., and Wold, A., in Proceedings of the 17th International Conference on the Physics of Semiconductors, San Francisco, 1984, edited by Chadi, J.D. and Harrison, W.A., (Springer, New York, 1985), p. 1419.Google Scholar
9. Shapira, Y., Foner, S., Ridgley, D.H., Dwight, K., and Wold, A., Phys. Rev. B30, 4021 (1984).CrossRefGoogle Scholar
10. Heiman, D., Isaacs, E.D., Becla, P., and Foner, S., this Proceedings.Google Scholar
11. Gaj, J.A., Planel, R., and Fishman, G., Solid State Commun. 29, 435 (1979).Google Scholar
12. Aggarwal, R.L., Jasperson, S.N., Becla, P., and Galazka, R.R., Phys. Rev. B32, 5132 (1985).Google Scholar
13. Aggarwal, R.L., Japserson, S.N., Becla, P., and Galazka, R.R., Phys. Rev. B34, 1789 (1986).Google Scholar
14. Barilero, G., Rigaux, C., Hau, N.H., Picoche, J.C., and Giriat, W., this Proceedings.Google Scholar
15. Behringer, R.E., J. Chem. Phys. 29, 537 (1958).Google Scholar
16. Shapira, Y., Foner, S., Becla, P., Domingues, D., Naughton, M.J., and Brooks, J.S., Phys. Rev. B33, 356 (1986).Google Scholar
17. Larson, B.E., Hass, K.C., and Aggarwal, R.L., Phys. Rev. B33, 1789 (1986).Google Scholar
18. Corliss, L.M., Hastings, J.M., Shapiro, S.M., Shapira, Y., and Becla, P., Phys. Rev. B33, 608 (1986).Google Scholar
19. Giebultowicz, T.M. Rhyne, J., and Furdyna, J. K., to be published.Google Scholar
20. Bartholomew, D.U., Suh, E.-K., Rodriguez, S., and Ramdas, A.K., Solid State Commun. 62, 235 (1987).CrossRefGoogle Scholar
21. Larson, B.E., Hass, K.C., Ehrenreich, H., and Carlsson, A.E., Solid State Commun. 56, 347 (1985).CrossRefGoogle Scholar
22. Ehrenreich, H., Hass, K.C., Larson, B.E., and Johnson, N.F., this Proceedings.Google Scholar