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Application of Sims Depth Profiling to Ceramic Materials

Published online by Cambridge University Press:  22 February 2011

Jenifer A.T. Taylor
Affiliation:
New York State College of Ceramics at Alfred University, Alfred, NY 14802
Paul F. Johnson
Affiliation:
New York State College of Ceramics at Alfred University, Alfred, NY 14802
Vasantha R.W. Amarakoon
Affiliation:
New York State College of Ceramics at Alfred University, Alfred, NY 14802
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Abstract

Depth profiling is becoming a common method of determining composition gradients for those research facilities that have access to SIMS. The problems with this procedure are briefly discussed but well referenced for those interested in using the technique. Spectra for application of depth profiling to a tantalum pentoxide layer on tantalum, silicon implanted in silica, preferential sputtering of niobium and surface treated lithium alumina silicate glass are presented.

Type
Research Article
Copyright
Copyright © Materials Research Society 1985

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References

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