Hostname: page-component-78c5997874-t5tsf Total loading time: 0 Render date: 2024-11-18T01:12:19.567Z Has data issue: false hasContentIssue false
  • English
  • Français

Apriori Process-Property Relationships of GaN Epitaxial Growth in Ga/N/H/C/O Systems

Published online by Cambridge University Press:  21 March 2011

Constantine Loukeris ,
Shumaila Khan  and
Christos G. Takoudis
Constantine Loukeris
Affiliation:
Department of Chemical Engineering, Advanced Materials Research Laboratory University of Illinois at Chicago, Chicago, Illinois 60607, USA
Shumaila Khan
Affiliation:
Department of Chemical Engineering, Advanced Materials Research Laboratory University of Illinois at Chicago, Chicago, Illinois 60607, USA
Christos G. Takoudis
Affiliation:
Department of Chemical Engineering, Advanced Materials Research Laboratory University of Illinois at Chicago, Chicago, Illinois 60607, USA
Get access

Abstract

A comprehensive thermodynamic analysis has been performed for the Ga/N/H/C/O system. Apriori process-property relationships of the metal organic chemical vapor deposition (MOCVD) of Gallium Nitride (GaN) are thus obtained. The parameter space for pure GaN growth is studied for system water vapor levels of 0.1 ppb – 10 ppm, system pressure between 10-6- 106 Torr, N/Ga feed ratios of 1 - 100,000, C/Ga feed ratios of 0 – 100, and H2/Ga feed ratios of 100 – 10,000. Higher growth temperatures for pure GaN are predicted at high operating pressures (for pressures greater than 0.1 Torr), low C/Ga feed ratios, high carrier gas flow rates, and mostly at low N/Ga feed ratios. Because relative C/Ga, N/Ga and H2/Ga feed ratios have been considered, the predictions in this study are applicable to any multiple and single precursor systems. Such analyses can be easily extended to the molecular beam epitaxy of GaN, when the feed ratio C/Ga = 0. Experimental data reported on the growth of GaN are found to be in good agreement with our theoretical predictions, for many systems that have included different source species.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 693 , 2001 , I3.19.1
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Tachibana, H., Ishido, T., Ogawa, M., Funato, M., Shizuo, Fujita, Shigeo, Fujita, J. of Crystal Grow., 196, 41 (1999).Google Scholar
2. Zhang, L., Zhang, R., Boleslawski, M.P., and Kuech, T.F., Mrs. Internet J. Nitride Semicond. Res., 4S1, G3.62 (1999).Google Scholar
3. Stephenson, G.B., Eastman, J.A., Thompson, C., Auciello, O., Thompson, L.J., Munkholm, A., Fini, P., DenBaars, S.P., and Speck, J.S., App. Phys. Lett., 74, 3326 (1999).Google Scholar
4. Grzegory, I., Jun, J., Bockowski, M., Krukowski, St., Wroblewski, M., Lucznik, B., and Porowski, S., J. Phys. Chem. Solids, 56, 639 (1995).Google Scholar
5. Pohl, U.W., Knorr, K., Moller, C., Gernert, U., Richter, W., Blasing, J., Christen, J., Gottfriedsen, J., and Schumann, H., Jpn. J. Appl. Phys. 38, L105 (1999).Google Scholar
6. Kawaguchi, Y., Honda, Y., Matsushima, H., Yamaguchi, M., Hiramatsu, K., and Sawaki, N., Jpn. J. Appl. Phys. 37, L966 (1998).Google Scholar
7. Kawabata, T., Matsuda, T., and Koike, S., J. Appl. Phys. 56, 2367 (1984).Google Scholar
8. Khan, M.A., Skogman, R.A., and Schulze, R.G., Appl. Phys. Lett. 42, 430 (1983).Google Scholar
9. Park, H.S., Waezsada, S.D., Cowley, A.H., and Roesky, H.W., Chem. Mater., 10, 2251 (1998).Google Scholar
10. Karpov, S.Y., Makarov, Y.N., Ramm, M.S., Talalaev, R.A., J. of Crys. Growth, 187, 397 (1998).Google Scholar
11. Vispute, R.D., Choopun, R.E., Patel, A., Talyansky, V., Sharma, R.P., Venkatesan, T., Sarney, W.L., Salamancariba, L., Andronescu, S.N., Iliadis, A.A., and Jones, K.A., J. of Electrnic Mater., 28, 275 (1999).Google Scholar
12. Krukowski, S., Cryst. Res. Technol., 34, 785 (1999).Google Scholar
13. Koukitu, A., Hama, S-I., Taki, T., and Seki, H., Jpn. J. Appl. Phys. 37, 762 (1998).Google Scholar
14. Koukitu, A., Takahashi, N., and Seki, H., Jpn. J. Appl. Phys. 36, L1136 (1997).Google Scholar
15. Koukitu, A., and Seki, H., Jpn. J. Appl. Phys. 36, L750 (1997).Google Scholar
16. Gordon, S., and McBride, B.J., Technical Report, No. SP-273, NASA, NASA Lewis Research Center (1971).Google Scholar
17. Gaynor, W., Research Thesis, School of Chemical Engineering, Purdue University (1989).Google Scholar
18. Richardson, C., “Enhancement of the ThermoEMP Program for Calculation of Complex Chemical Equilibrium Compositions,” NSF-REU Report, Department of Chemical Engineering, University of Illinois at Chicago (1998).Google Scholar
19. Chen, W.-L., and Gunshor, R., Private Communication, (2000).Google Scholar