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Argon Ion and Excimer Laser Induced Epitaxy of GaP
Published online by Cambridge University Press: 25 February 2011
Abstract
Laser-induced epitaxial growth of GaP has been achieved using both pyrolytic and photolytic reactions. A focused beam from an argon ion laser operating at 514.5 nm was used to ‘direct-write’ epitaxial microstructures of GaP on silicon using a pyrolytic process. An ArF excimer laser has also been used to demonstrate homoepitaxy utilizing the photolytic process.
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- Copyright © Materials Research Society 1989
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