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a-Si:H Films Prepared by Ecr Plasma Enhanced CVD
Published online by Cambridge University Press: 26 February 2011
Abstract
Hydrogenated amorphous silicon (a-Si:H) films prepared by electron cyclotron resonance plasma enhanced CVD (ECR PECVD) were investigated electrically and optically. The electrical and optical properties of a-Si:H were strongly dependent on magnet coil current, microwave power, and substrate temperature. A high deposition rate of a-Si:H up to 150 nm/min was realized by this technology. The photoconductive characteristics prepared at 300°C are comparable to those obtained by glow discharge PECVD (GD PECVD).
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