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a-Si:H TFT Driven Linear Image Sensor

Published online by Cambridge University Press:  26 February 2011

H. Ito ,
T. Suzuki ,
M. Nobue ,
Y. Nishihara ,
Y. Sakai ,
T. Ozawa  and
S. Tomiyama
H. Ito
Affiliation:
Electronic Imaging & Devices Research Laboratory, Fuji Xerox Co., Ltd.2274 Hongo, Ebina-shi, Kanagawa 243-04, Japan
T. Suzuki
Affiliation:
Electronic Imaging & Devices Research Laboratory, Fuji Xerox Co., Ltd.2274 Hongo, Ebina-shi, Kanagawa 243-04, Japan
M. Nobue
Affiliation:
Electronic Imaging & Devices Research Laboratory, Fuji Xerox Co., Ltd.2274 Hongo, Ebina-shi, Kanagawa 243-04, Japan
Y. Nishihara
Affiliation:
Electronic Imaging & Devices Research Laboratory, Fuji Xerox Co., Ltd.2274 Hongo, Ebina-shi, Kanagawa 243-04, Japan
Y. Sakai
Affiliation:
Electronic Imaging & Devices Research Laboratory, Fuji Xerox Co., Ltd.2274 Hongo, Ebina-shi, Kanagawa 243-04, Japan
T. Ozawa
Affiliation:
Electronic Imaging & Devices Research Laboratory, Fuji Xerox Co., Ltd.2274 Hongo, Ebina-shi, Kanagawa 243-04, Japan
S. Tomiyama
Affiliation:
Electronic Imaging & Devices Research Laboratory, Fuji Xerox Co., Ltd.2274 Hongo, Ebina-shi, Kanagawa 243-04, Japan
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Abstract

A new contact type linear image sensor, which has 8.5 inches in length and 300 dot/inch, has been developed. By using a thin film transistor (TFT) array as a switching device, it requires only one IC chip compared with 20 ICs in conventional sensor.

The new sensor integrates a-Si:H photodiode (PD) array, a-Si:H TFT array, multiplex circuits and an analog multiplexer on a single substrate. The TFT has an inverted staggered structure and amorphous silicon nitride (SiNx) is used as a gate insulator. The PD has a Cr/a-Si:H/ITQ sandwich structure and each PD is completely isolated by photolithography. In the multiplex circuits, a ground line is inserted between each signal line to reduce a capacitive coupling between them.

A new custom LSI has also been developed. It has 64-ch input terminals to detect small signal with amplification and 41-ch output terminals to control the gates of TFT array. The sensor with the new LSI has achieved 2MHz clock frequency operation and proved to be used as a high speed device.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 95: Symposium E – Amorphous Silicon Semiconductors--Pure and Hydrogenated , 1987 , 437
Copyright
Copyright © Materials Research Society 1987

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References

1. Hamano, T. et al, Proc. of 13th conf. on Solid State Devices, Tokyo, 245 (1981).Google Scholar
2. Ozawa, T. et al, Proc. of 1982 IMC, Tokyo, 132 (1982).Google Scholar
3. Ito, H. et al, IEDM Dig. Tech. Papers, 436 (1985).Google Scholar