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As-Implanted and Annealing Behavior of Hand Be Implants in InP and Comparison with GaAs

Published online by Cambridge University Press:  26 February 2011

J. M. Zavada ,
R. G. Wilson  and
S. W. Novak
J. M. Zavada
Affiliation:
US Army Research Office, Research Triangle Park, NC 27709
R. G. Wilson
Affiliation:
Hughes Research Laboratories, Malibu, CA 90265
S. W. Novak
Affiliation:
Evans East Inc., Plainsboro, NJ 08356
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Abstract

Indium phosphide (InP) and its related alloys have gained increased importance in recent years due to their widespread application in opto-electronics and high speed microelectronics. Ion beam processing has been used to produce electrical activity in selective areas of wafers and for device isolation. However, major problems remain concerning the location, electrical/chemical activity, and thermal stability of the implanted atoms in such devices. In this paper, we present detailed results concerning the distribution of 1H and Be atoms implanted into single crystal InP wafers. Secondary ion mass spectrometry has been used to depth profile 1H and Be implanted at different engergies, from 0.1 to 1.0 MeV, and with fluences up to 1016 cm2. Implanted samples have also been examined after furnace annealing to determine the onset and extent of thermal redistribution. Resulting profiles have been compared with corresponding implants into single crystal GaAs to help clarify diffusion behavior.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 240: Symposium E – Advanced III-V Compound Semiconductor Growth, Processing and Devices , 1991 , 881
Copyright
Copyright © Materials Research Society 1992

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References

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