Hostname: page-component-84b7d79bbc-fnpn6 Total loading time: 0 Render date: 2024-07-29T04:36:42.954Z Has data issue: false hasContentIssue false
  • English
  • Français

Assessment of Free Electron to Free Hole Ratios in a-Si:H By Ambipolar Diffusion and Photoconductivity Measurements

Published online by Cambridge University Press:  21 February 2011

Patrice Pipoz ,
Evelyne Sauvain ,
Jacques Hubin  and
Arvind Shah
Patrice Pipoz
Affiliation:
Université de Neuchâtel, Institut de Microtechnique, CH-2000 Neuchâtel, Switzerland
Evelyne Sauvain
Affiliation:
Université de Neuchâtel, Institut de Microtechnique, CH-2000 Neuchâtel, Switzerland
Jacques Hubin
Affiliation:
Université de Neuchâtel, Institut de Microtechnique, CH-2000 Neuchâtel, Switzerland
Arvind Shah
Affiliation:
Université de Neuchâtel, Institut de Microtechnique, CH-2000 Neuchâtel, Switzerland
Get access

Abstract

The authors report on systematic photoconductivity σph and ambipolar diffusion length Lamb measurements carried out on a series of lightly p- and n-doped samples and monitored throughout the entire light-induced degradation process. The results are interpreted based on a transport model involving free carriers (nf and pf), localized charge on bandtails, as well as dangling bond and dopant charges.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 777
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Ritter, D., Weiser, K. and Zeldov, E., J. Appl. Phys. 62 (11), 4563 (1987).Google Scholar
[2] Ritter, D., Zeldov, E. and Weiser, K., Phys. Rev. B 38 (12), 8296 (1988).CrossRefGoogle Scholar
[3] Curtins, H., Wyrsch, N., Favre, M., Shah, A., Plasma Chem. & Plasma Proc. 7, 267 (1987)Google Scholar
[4] Street, R.A., Phys. Rev. Lett., 49 (16), 1187 (1982).CrossRefGoogle Scholar
[5] Shah, A., Hubin, J., Sauvain, E., Proceedings of the 6th PVSEC, New-Delhi, India, 1992, published by B.K. Das and S.N Singh, Oxford & IBH, New-Delhi, p. 685.Google Scholar
[6] Sauvain, E., PhD thesis, Université de Neuchâtel, Switzerland, 1992.Google Scholar
[7] Hubin, J., Sauvain, E., Shah, A., to be published in Phil. Mag. B.Google Scholar
[8] Shah, A., Hubin, J., Technical Digest of the 5th PVSEC, Kyoto, 821 (1990).Google Scholar
[9] Wyrsch, N., Shah, A., J. Non-Cryst. Sol. 137&138, 431, (1991).Google Scholar
[10] Sauvain, E., Hubin, J., Shah, A., Pipoz, P., Phil. Mag. Lett. 63(6), 327 (1991).CrossRefGoogle Scholar
[11] Sauvain, E., Shah, A., Hubin, J., Pipoz, P., J. Non-Cryst. Sol. 137&138, 475 (1991).Google Scholar
[12] Spear, W.E. & LeComber, P.G., Solid State Comm. 17, 1193 (1975).CrossRefGoogle Scholar
[13] see for ex. : Kočka, J., Nebel, C.E. & Abel, C. D., Phil. Mag. B 63(1), 221 (1991);Google Scholar
Hou, J.Y., Arch, J.K., Fonash, S.J., Proc. of 21th IEEE PVSEC, Orlando, 1535 (1990);Google Scholar
McElheny, P.J., Fonash, S.J., Proc. of 21th IEEE PVSEC, Orlando, 1540 (1990).Google Scholar