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Atomic and Electronic Structures of Grain Boundary in Chemical Vapor Deposited Diamond Thin Film

Published online by Cambridge University Press:  10 February 2011

Y. Zhang ,
H. Ichinose ,
Y. Ishida ,
K. Ito  and
M. Nakanose
Y. Zhang
Affiliation:
Department of Materials Science, University of Tokyo, Tokyo, Japan
H. Ichinose
Affiliation:
Department of Materials Science, University of Tokyo, Tokyo, Japan
Y. Ishida
Affiliation:
Department of Materials Science, University of Tokyo, Tokyo, Japan
K. Ito
Affiliation:
Department of Materials Science, University of Tokyo, Tokyo, Japan
M. Nakanose
Affiliation:
Aerospace Division, Nissan Motor Inc., Tokyo, Japan
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Abstract

High resolution electron microscopy and electron energy-loss spectrometry were used to investigate both atomic and electronic structures of grain boundaries in diamond thin films grown by chemical vapor deposition. The atomic structures of {112}σ3 and {114}σ9 <110= tilt boundaries in diamond show different features from those in other diamond structure semiconductors. The electron energy-loss spectra recorded from the grain boundary regions show extra intensity near the energy-loss corresponding to carbon 1s-to-π*; transition, as compared to the spectra recorded from neighboring crystalline regions. This gives the evidence that the dangling bonds are not fully reconstructed along <110= direction in the boundary structure. Atomic models are constructed for these boundaries with the presence of non-tetracoordinated atoms. The stability of the boundary structure is explained by the π-like bonding between the nontetracoordinated atoms.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 416: Symposium DD – Diamond for Electronic Applications , 1995 , 355
Copyright
Copyright © Materials Research Society 1996

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References

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