Hostname: page-component-7bb8b95d7b-wpx69 Total loading time: 0 Render date: 2024-09-13T04:20:08.818Z Has data issue: false hasContentIssue false
  • English
  • Français

The Atomistic and Quantum Mechanical Origins of Light-Induced Defects in a-Si

Published online by Cambridge University Press:  21 February 2011

P. A. Fedders ,
Y. Fu  and
D. A. Drabold
P. A. Fedders
Affiliation:
Department of Physics, Washington University, St. Louis, Missouri 63130
Y. Fu
Affiliation:
Department of Physics, Washington University, St. Louis, Missouri 63130
D. A. Drabold
Affiliation:
Department of Materials Science and Engineering, University of Illinois, Urbana, Illinois 61801
Get access

Abstract

We present an atomistic and quantum mechanical model of light-induced defects (the Staebler-Wronski effect). The model is based in part on our observations of molecular dynamics simulations with an ab initio code and requires a change in the charge of a well localized state in the gap, such as a dangling bond, to nucleate the new defects. Besides the new defects, a substantial rearrangement of the supercell is observed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 335
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Staebler, D. L. and Wronski, C. R., Appl. Phys. Lett. 31, 292 (1977).Google Scholar
2. Tanaka, K., Proc. 14th Inti. Conf. on Amorphous Semiconductors, Garmisch, Germany, Aug. 1991 (to be published).Google Scholar
3. Stutzmann, M., Jackson, W., and Tsai, C. C., Phys. Rev. B 32, 23 (1985).Google Scholar
4. Jackson, W. B., Phys. Rev. B 41, 1059 (1990).Google Scholar
5. Santos, P. V., Jackson, W. B., and Street, R. A., Materials Research Society Symposium Proceedings 219,Google Scholar
6. Adler, D., J. Phys. (Paris) Colloq 42, C4–3 (1981).Google Scholar
7. Bar-Yam, Y., Adler, D., and Joannopoulos, J., Phys. Rev. Lett. 57, 467 (1986).Google Scholar
8. Biswas, R., Kwon, I., and Soukoulis, C. M., Phys. Rev. B 44, 3403 (1991).Google Scholar
9. Redfield, D. and Bube, R. H., Phys. Rev. Lett. 65, 464 ( 1990).Google Scholar
10. Santos, P. V., Johnson, N. M., and Street, R. A., Phys. Rev. Lett. 67, 2686 (1991).Google Scholar
11. Smith, Z. E. and Wagner, S. in Amorphous Semiconductors, edited by Fritzsche, H., (World Scientific, 1989), p. 67.Google Scholar
12. Norberg, R. E., Fedders, P. A., Bodart, J., Corey, R., Kim, Y. W., Paul, W., and Turner, W., Materials Research Society Symposium Proceedings 219, 223 (1991).Google Scholar
13. Sankey, O. F. and Niklewski, D. J., Phys. Rev. B 40, 3979 (1989).Google Scholar
14. Adams, G. B. and Sankey, O. F., Phys. Rev. Lett. 67, 867 (1991).Google Scholar
15. Drabold, D. A., Dow, J. D., Fedders, P. A., Carlsson, A. E., and Sankey, O. F., Phys. Rev. B 42, 5345 (1990).Google Scholar
16. Fedders, P. A., Drabold, D. A., and Klemm, S., Phys. Rev. B45, 4048 (1992).Google Scholar
17. Fedders, P. A. and Drabold, D. A. Materials Research Society Symposium Proceedings 219, 247 (1991).Google Scholar
18. Drabold, D. A., Fedders, P. A., and Sankey, O. F., Phys. Rev. B 42, 5135 (1990).Google Scholar
19. Drabold, D. A., Fedders, P. A., Klemm, S., and Sankey, O. F., Phys. Rev. Lett. 67, 2179 (1991).Google Scholar
20. Klemm, S., Drabold, D. A., and Fedders, P. A., Bull. Am. Phys. Soc. 36, 455 (1991).Google Scholar
21. Wooten, F. and Weaire, D., Solid State Physics: Advances in Research and Applications, edited by Ehrenreich, H. and Turnbull, D. (Academic Press, New York, 1987), Vol. 40, p. 2.Google Scholar
22. Unold, T. and Cohen, J. D., Appl. Phys. Lett. 58, 723 (1991).Google Scholar