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Atomistic Simulations of Deposition Processes of Epitaxial Layers

Published online by Cambridge University Press:  17 March 2011

K. Shintani ,
H. Sugii ,
M. Nishimura  and
T. Nakajima
K. Shintani
Affiliation:
Department of Mechanical Engineering and Intelligent Systems, University of Electro-Communications, 1-5-1 Chofugaoka, Chofu, Tokyo 182-8585, Japan, shintani@mce.uec.ac.jp
H. Sugii
Affiliation:
Department of Mechanical Engineering and Intelligent Systems, University of Electro-Communications, 1-5-1 Chofugaoka, Chofu, Tokyo 182-8585, Japan
M. Nishimura
Affiliation:
Department of Mechanical Engineering and Intelligent Systems, University of Electro-Communications, 1-5-1 Chofugaoka, Chofu, Tokyo 182-8585, Japan
T. Nakajima
Affiliation:
Department of Mechanical Engineering and Intelligent Systems, University of Electro-Communications, 1-5-1 Chofugaoka, Chofu, Tokyo 182-8585, Japan
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Abstract

The deposition process of epitaxial layers is simulated by the method of molecular dynamics. The interaction forces between atoms are calculated using the Stillinger-Weber potential. Before the deposition of atoms, the substrate is equilibrated at a specified temperature. Atoms with identical initial velocities and with initial coordinates selected at random in the plane parallel to the growth surface arrive at the substrate to form an overlayer. During the deposition, the lower part of the substrate is held at an initially specified temperature by velocity scaling. How the growth morphology of an overlayer is influenced by the substrate temperature is investigated in connection with the behavior of deposited atoms.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 696: Symposium N – Current Issues in Heteroepitaxial Growth--Stress Relaxation and Self Assembly , 2001 , N3.1
Copyright
Copyright © Materials Research Society 2002

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