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Atomistic Simulations of Dislocation-Interface Interactions in Thin Films

Published online by Cambridge University Press:  15 March 2011

R. W. Leger  and
Y.-L. Shen
R. W. Leger
Affiliation:
Department of Mechanical Engineering, University of New Mexico Albuquerque, NM 87131, U.S.A.
Y.-L. Shen
Affiliation:
Department of Mechanical Engineering, University of New Mexico Albuquerque, NM 87131, U.S.A.
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Abstract

Atomistic simulations are carried out to study the effect of atomic sliding capability at the interface between a plastically deforming film and a stiff substrate. Molecular statics modeling is utilized to corroborate the overall film response and the nano-scale defect mechanisms. A free-sliding interface is shown to be able to cause “reflection” of oncoming dislocations and enhance film plasticity. A rigidly bonded interface, on the other hand, is seen to resist approaching dislocations. Partial sliding results in a transitional behavior between the two extremes, as revealed in our parametric analysis. The sliding capability of interface atoms is also seen to dictate the overall film response.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 821: Symposium P – Nanoscale Materials & Modeling-Relations Among Processing, Microstructure and Mechanical Properties , 2004 , P6.7
Copyright
Copyright © Materials Research Society 2004

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References

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