Hostname: page-component-5c6d5d7d68-wpx84 Total loading time: 0 Render date: 2024-08-17T16:18:09.040Z Has data issue: false hasContentIssue false
  • English
  • Français

Ballistic Electron Surface-Emitting Cold Cathode by Porous Polycrystalline Silicon Film Formed on Glass Substrate

Published online by Cambridge University Press:  17 March 2011

Takuya Komoda ,
Tsutomu Ichihara ,
Yoshiaki Honda ,
Koichi Aizawa  and
Nobuyoshi Koshida
Takuya Komoda
Affiliation:
Advanced Technology Research Laboratory, Matsushita Electric Works, Ltd., Osaka, 571-8686, Japan
Tsutomu Ichihara
Affiliation:
Advanced Technology Research Laboratory, Matsushita Electric Works, Ltd., Osaka, 571-8686, Japan
Yoshiaki Honda
Affiliation:
Advanced Technology Research Laboratory, Matsushita Electric Works, Ltd., Osaka, 571-8686, Japan
Koichi Aizawa
Affiliation:
Advanced Technology Research Laboratory, Matsushita Electric Works, Ltd., Osaka, 571-8686, Japan
Nobuyoshi Koshida
Affiliation:
Faculty of Technology, Tokyo University of Agriculture and Technology, Tokyo, 184-8588, Japan
Get access

Abstract

It is demonstrated that a porous polycrystalline silicon (PPS) film is useful as a ballistic electron emitter for excitation source of a flat panel display. A 1.5 µ m polysilicon layer is deposited on a silicon substrate by Low Pressure Chemical Vapour Deposition (LPCVD) technique and subsequently anodised in an ethanoic HF solution and oxidised in a Rapid Thermal Oxidation (RTO) furnace. A thin Au film is deposited onto the RTO-treated PPS layer and used as a top electrode. The electron emission current Ie and the diode current Ips are measured as a function of the bias voltage Vps. Electron emission of which onset voltage is about 8 V rapidly increases with increasing Vps. The Ie value reaches about 2 mA/cm2 for Vps= 20 V at which the emission efficiency defined as Ie/Ips is about 1 %. The emission mechanism has also been investigated in terms of the correlation between the emitted electron energy and the structure of PPS layer. The observed energy distribution curve of output electrons suggests that the PPS layer acts as a ballistic transport medium and the emission occurs based on multiple tunnelling through silicon nanocrystallites. The PPS layer is also formed on the polysilicon layer deposited on a glass substrate by Plasma Enhanced Chemical Vapour Deposition (PCVD) technique. In this case, the film is treated by an electrochemical oxidation (ECO) in an H2SO4 solution. Similar emission characteristics are observed, although the emission current is lower than that formed on silicon substrate. We also demonstrate the 2.6 inches diagonal 53×40 pixels multicolour flat panel display. We name it ballistic electron surface-emitting display device (BSD). BSD shows the possible application to the future flat panel display.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 638: Symposium F – Microcrystaline & Nanocrystalline Semiconductors-2000 , 2000 , F4.1.1
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Canham, L T, Appl Phys Lett, 57, 1046 (1990)Google Scholar
[2] Koshida, N and Koyama, H, Appl Phys Lett, 60, 347 (1992)Google Scholar
[3] Gelloz, B. and Koshida, N, J Appl Phys, 88, 4319 (2000)Google Scholar
[4] Komoda, T, Kelly, J P, Cristiano, F, Nejim, A, Hemment, P L F, Homewood, K P, Gwillam, R., Mynard, J E and Sealy, B J: Nucl Instr Method, B96, 387 (1995)Google Scholar
[5] Komoda, T, Kelly, J P, Nejim, A, Homewood, K P, Hemment, P L F and Sealy, B J, Mat Res Soc Symp Proc, 358, 163 (1995)Google Scholar
[6] Koshida, N, Ozaki, T, Sheng, X and Koyama, H, Jpn J Appl Phys, 34, L705 (1995)Google Scholar
[7] Sheng, X, Koyama, H, koshida, N, Iwasaki, S, Negishi, N, Chuman, T, Yoshikawa, T and Ogasawara, K, J Vac Sci Technol, B15(5), 1 (1997)Google Scholar
[8] Spindt, C A, J Appl Phys, 39, 3504 (1968)Google Scholar
[9] Spindt, C A, Holland, C E, Rosengreen, A, and Brodie, I, J Vac Sci Technol, B11, 468 (1993)Google Scholar
[10] Yokoo, K, Tanaka, H, Sato, S, Murota, J and Ono, S, J Vac Sci Technol, B11, 429 (1993)Google Scholar
[11] Suzuki, M and Kusunoki, T, IDW'96, 529(1996)Google Scholar
[12] Komoda, T, Sheng, X, and Koshida, N, Mat Res Soc Symp Proc, 509, 187 (1998)Google Scholar
[13] Komoda, T, Sheng, X, and Koshida, N, J Vac Sci Technol, B17(3), 1076 (1999)Google Scholar
[14] Komoda, T, Honda, Y, Hatai, T, Watabe, Y, Ichihara, T, Aizawa, K, Kondo, Y, and Koshida, N, Proceedings of SID'00, 28.4, 428 (2000)Google Scholar
[15] Hirano, T, Kanemaru, S, Tanoue, H and Itoh, J, Jpn J Appl Phys, 35, 6637(1996)Google Scholar
[16] D Onn, G, Smejtec, P, and silver, M, J Appl. Phys., 45, 119 (1974)Google Scholar
[17] Michaelson, H B, J Appl. Phys. 48, 4729(1977)Google Scholar
[18] Sedlacik, R, Karel, F, Oswald, J, Fejfar, A, Pelant, I, and Kock, J, Thin Solid Films, 255, 269 (1995)Google Scholar
[19] Matsukawa, T, Kanemaru, S, Nagao, M and Itoh, J, Proceeding of IDW'99, FED3-3, 943(1999)Google Scholar
[20] Gorkom, G G P van and Hoeberechts, A M E, J Vac Sci Technol, B4, 108 (1986)Google Scholar