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The band alignment problem at the Si-high-k dielectric interface

Published online by Cambridge University Press:  01 February 2011

A.A. Demkov ,
L.R.C. Fonseca ,
J. Tomfohr  and
O.F. Sankey
A.A. Demkov
Affiliation:
Motorola, Inc. Austin, Texas, USA
L.R.C. Fonseca
Affiliation:
Motorola, Inc. Tempe, Arizona, USA
J. Tomfohr
Affiliation:
Arizona State University, Tempe, Arizona, USA
O.F. Sankey
Affiliation:
Arizona State University, Tempe, Arizona, USA
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Abstract

We investigate the use of the complex band structure of high-k gate dielectrics to estimate their charge neutrality levels, and compute band offsets to Si. Results of these model calculations are then compared to those obtained with direct electronic structure methods and available experiment. It appears that charge neutrality levels thus obtained indeed provide a consistent picture. However, the uncertainty in the conduction band position inherent in the local density approximation may render the theory inadequate for the engineering support. Despite this limitation, linear re-scaling of the charge neutrality levels based on the experimental band gaps has shown excellent agreement with experimental data.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 786: Symposium E – Fundamentals of Novel Oxide/Semiconductor Interfaces , 2003 , E5.6
Copyright
Copyright © Materials Research Society 2004

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