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Band-Offsets Between Group-III-Nitrides

Published online by Cambridge University Press:  21 February 2011

E. A. Albanesi ,
W. R. L. Lambrecht  and
B. Segall
E. A. Albanesi
Affiliation:
Department of Physics, Case Western Reserve University, Cleveland, OH-44106–7079
W. R. L. Lambrecht
Affiliation:
Department of Physics, Case Western Reserve University, Cleveland, OH-44106–7079
B. Segall
Affiliation:
Department of Physics, Case Western Reserve University, Cleveland, OH-44106–7079
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Abstract

The valence-band offset at the zincblende AIN/GaN. AIN/InN and InN/GaN (110) interfaces are calculated self-consistently by means of the linear muffin-tin orbital method using up to 5+5 layer supercells. All interfaces have a type I-offset. Assuming interface orientation and polytype effects on the valence-band maximum to be reasonably small, a type I offset can also be expected for wurtzite interfaces. Our results are in very good agreement with experimental values for AIN/GaN, the only nitride interface for which they are available.

Subject index terms: band offsets, interfaces, hetero junctions, superlattices. III-nitrides.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 339: Symposium D – Diamond, Silicon Carbide and Nitride Wide Bandgap Semiconductors , 1994 , 607
Copyright
Copyright © Materials Research Society 1994

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