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Beam-Assisted CVD of Microelectronic Films
Published online by Cambridge University Press: 21 February 2011
Abstract
The properties of SiO2 and Si3 N4 films deposited by an ArF excimer laser, glow discharge electron beam and conventional plasma-enhanced CVD are compared. The deposition apparatus, technique, and conditions in addition to the physical, chemical and electrical properties of the films are discussed.
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- Copyright © Materials Research Society 1984
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