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The Behavior of Cyclic Voltammetry Stripping (CVs) with Tin-Doped Indium Oxide in 0.3M Hydrochloric Acid

Published online by Cambridge University Press:  11 February 2011

K. C. Li ,
C. A. Huang ,
G. C. Tu  and
W. S. Wang
K. C. Li
Affiliation:
Dept. Mechanical Engineering, Chang-Gung University, Taoyuan, Taiwan R.O.C.
C. A. Huang
Affiliation:
Dept. Mechanical Engineering, Chang-Gung University, Taoyuan, Taiwan R.O.C.
G. C. Tu
Affiliation:
Dept. Materials Science and Engineering, Chiao-Tung University, Hsinchu, Taiwan R.O.C.
W. S. Wang
Affiliation:
Dept. Materials Science and Engineering, Chiao-Tung University, Hsinchu, Taiwan R.O.C.
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Abstract

The cyclic voltammetry stripping (CVs) behavior of the tin-doped indium oxide (ITO) on SiO2 in 0.3M HCl is reported. The CVs result showed an obvious reduction-current peak that occurred during the first cathodic potential scanning. Smaller reduction current and more negative potential of the reduction-current peak were also observed for the ITO that was annealed at 500 °C. The result was attributed to the replenished oxygen-deficient site and the oxygen anion density is decreased in the ITO. The present study has proved that CVs is a useful method to differentiate the carrier concentration in ITO film controlled by different pretreatments. Many spherical In-Sn particles were formed on the ITO when the reduction current took place. During precipitation of these spherical particles, the grain boundaries of the ITO were dissolved and the ITO surface nearby the grain boundaries offered a preferred nucleation site for the formation of these spherical In-Sn particles. Based on the microstructure observed and the result derived from the short potential range scanning, the formation mechanism of the spherical particle is proposed.

Keywords

tin-doped indium oxide (ITO)cyclic voltammetry stripping (CVs)and oxide reductionIn-Sn particle
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 747: Symposia T/V – Crystalline Oxides on Semiconductors – Interfacial Issues for Oxide-Based Electronics , 2002 , V1.2
Copyright
Copyright © Materials Research Society 2003

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References

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