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Behavior of Zinc During Formation of Au(Zn) Ohmic Contacts to P-Type GaAs

Published online by Cambridge University Press:  22 February 2011

E. Kamińska ,
A. Piotrowska ,
E. Mizera ,
R. Zarecka ,
J. Adamczewska  and
E. Dynowska
E. Kamińska
Affiliation:
Institute of Electron Technology, 02-668 Warsaw;, Poland
A. Piotrowska
Affiliation:
Institute of Electron Technology, 02-668 Warsaw;, Poland
E. Mizera
Affiliation:
Institute of Physics, Polish Academy of Sciences; 02-668 Warsaw, Poland
R. Zarecka
Affiliation:
Institute of Electron Technology, 02-668 Warsaw;, Poland
J. Adamczewska
Affiliation:
Institute of Electron Technology, 02-668 Warsaw;, Poland
E. Dynowska
Affiliation:
Institute of Physics, Polish Academy of Sciences; 02-668 Warsaw, Poland
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Abstract

The reactions between (100) GaAs and Au, Zn, and Au(Zn) ohmic contact metallization have been investigated by the use of transmission electron microscopy and x-ray diffraction. Emphasis is placed on the particular role of Zn during consecutive stages of the formation of an ohmic contact to p-GaAs. The most significant feature of the interaction of Zn with GaAs is the penetration of Zn atoms into the native oxide, which remains at the surface of GaAs after chemical treatment. Moreover, the presence of Zn in Au-based metallization is found to considerably suppress the thermally induced growth of metallization grains, making the microstructure of the contact virtually intact upon annealing at temperatures up to 460°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 300: Symposium D1 – III-V Electronic and Photonic Device Fabrication and Performance , 1993 , 237
Copyright
Copyright © Materials Research Society 1993

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References

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