Hostname: page-component-77c89778f8-n9wrp Total loading time: 0 Render date: 2024-07-18T09:36:25.420Z Has data issue: false hasContentIssue false
  • English
  • Français

Beic Investigation of Defects Induced in Cw Beam-Annealed Si

Published online by Cambridge University Press:  15 February 2011

N.H. Sheng ,
M. Mizuta  and
J.L. Merz
N.H. Sheng
Affiliation:
Department of Electrical and Computer Engineering, University of California, Santa Barbara, California, 93106, USA
M. Mizuta
Affiliation:
Department of Electrical and Computer Engineering, University of California, Santa Barbara, California, 93106, USA
J.L. Merz
Affiliation:
Department of Electrical and Computer Engineering, University of California, Santa Barbara, California, 93106, USA
Get access

Abstract

EBIC has been used to investigate the beam-induced damage in As+ -implanted Si subjected to scanned laser or electronbeam annealing. Comparison is made between these annealing techniques; in general, electron-beam annealing is found to give superior results. In addition, several different experiments combining these techniques are described. Samples were pre-annealed prior to laser annealing, using either thermal or electron-beam annealing. Other samples were given a thermal post-anneal after laser-annealing. The effect of these treatments on defect formation is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1: Symposium – Laser and Electron-Beam Solid Interactions in Materials Processing , 1980 , 155
Copyright
Copyright © Materials Research Society 1981

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Gat, A. Gibbons, J.F., Appl. Phys. Lett. 32, 142 (1978).Google Scholar
2. Ratnakumar, K.N. Pease, R.F.W. Bartelink, D.J. and Johnson, N.M., J. Vac. Sci. Technol. 16(6), 1843 (1979).Google Scholar
3. Gat, A. Gibbons, J.F Deline, V.R. Williams, P. and Jr.Evans, C.A., Appl. Phys. Lett. 32, 276 (1978).Google Scholar
4. Ishida, K. Okabayashi, H. and Yoshida, M., Appl. Phys. Lett. 37, 175 (1980).CrossRefGoogle Scholar
5. Regolini, J.L. Gibbons, J.F. Sigmon, T.W. Pease, R.F.W., Appl. Phys. Lett. 34, 410 (1979).Google Scholar
6. Bentini, G.G. Galloni, R. and Nipoti, R., Appl. Phys. Lett. 36, 661 (1980).Google Scholar
7. Mizuta, M. Sheng, N.H. and Merz, J.L., Appl. Phys. Lett. 37, 154 (1980). Samples were annealed at 250°C, not 350°C as reported in this reference.Google Scholar
8. Mizuta, M. Sheng, N.H. and Merz, J.L., Appl. Phys. Lett., to be published.Google Scholar
9. Mizuta, M. Sheng, N.H. and Merz, J.L., (22ndElectronics Materials Conference, Cornell University, June 1980).Google Scholar
10. Kimmerling, L.C. Leamy, H.J. Benton, J.L. Ferris, S.D. Freeland, P.E. and Rubin, J.J., in Semicond. Silicon/1977 (Electrochemical Society, Princeton, N.J. 1977), p. 468.Google Scholar
11. Ioannou, D.E. and Davidson, S.M., Phys. Stat. Sol.(a) 48, K1 (1978).Google Scholar
12. Nakashima, H. Shiraki, Y. and Miyao, M., J. Appl. Phys. 50, 5966 (1979).Google Scholar
13. Everhart, T.E. and Hoff, P.H., J. Appl. Phys. 42, 5837 (1971).Google Scholar
14. Nissim, Y.I. Lietoila, A. Gold, R.B. and Gibbons, J.F., J. Appl. Phys. 51, 274 (1980).Google Scholar
15. Neukermans, A. and Saperstein, W., J. Vac. Sci. Technol., 16, 1847 (1979).Google Scholar