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Bias-Voltage Dependence in Atomic-Scale Spin Polarized Scanning Tunneling Microscopy of Mn3N2 (010)

Published online by Cambridge University Press:  01 February 2011

Arthur R. Smith ,
Rong Yang  and
Haiqiang Yang
Arthur R. Smith
Affiliation:
Department of Physics and Astronomy, Condensed Matter and Surface Science Program and Nanoscience and Quantum Phenomena Institute, Ohio University, Athens, OH 45701
Rong Yang
Affiliation:
Department of Physics and Astronomy, Condensed Matter and Surface Science Program and Nanoscience and Quantum Phenomena Institute, Ohio University, Athens, OH 45701
Haiqiang Yang
Affiliation:
Department of Physics and Astronomy, Condensed Matter and Surface Science Program and Nanoscience and Quantum Phenomena Institute, Ohio University, Athens, OH 45701
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Abstract

Atomic-scale spin-polarized scanning tunneling microscopy results on the manganese nitride Mn3N2 (010) surface are presented. The images show the row-wise antiferromagnetic structure of the surface. It is shown that the bias voltage between tip and sample affects both the magnetic and non-magnetic components of the height profile. In particular, a reversal of the magnetic contrast is shown to occur at a certain bias voltage.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 803: Symposia GG/HH – Advanced Characterization Techniques for Data Storage Materials – Phase Change and Nonmagnetic Materials for Data Storage , 2003 , GG1.2
Copyright
Copyright © Materials Research Society 2004

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References

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