Hostname: page-component-77c89778f8-5wvtr Total loading time: 0 Render date: 2024-07-24T10:25:29.493Z Has data issue: false hasContentIssue false

Blue Electroluminescent Devices Fabricated from Silicon and Germanium Nanocrystals

Published online by Cambridge University Press:  10 February 2011

Gildardo R. Delgado
Affiliation:
University of California, Davis, CA Lawrence Livermore National Laboratory, Livermore, CA 94550
Howard W. H. Lee
Affiliation:
Lawrence Livermore National Laboratory, Livermore, CA 94550
Khashayar Pakbaz
Affiliation:
Lawrence Livermore National Laboratory, Livermore, CA 94550
Get access

Abstract

Blue electroluminescent (EL) devices were fabricated with Si nanocrystals produced by ultrasonic fracturing of porous silicon (PSi) as well as silicon and germanium nanocrystals synthesized through a control chemical reaction. The active EL material consists of Si and Ge nanocrystals embedded in various host matrices such as polyvinylcarbazole (PVK), polymethylmethacrylate (PMMA), silica sol-gels and other organic polymers and small organic molecules. Several device configurations were used to induce EL processes that rely on radiative electron-hole recombination within the nanocrystals. We report on the optical and electrical properties of these devices. Applications for these EL devices include highly efficient light emitting devices. The cost and ease of processing of these material systems make them potentially ideal for flat panel display applications.

Type
Research Article
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Heinrich, J.L., Curtis, C.L., Credo, G.M. et al., “Luminescent Colloidal Silicon Suspensions from Porous Silicon,” Science 255, 6668 (1992).Google Scholar
2. Vial, J.C. and Derrien, J., Porous Silicon Science and Technology (Springer-Verlag, New York, 1995).Google Scholar
3. Feng, Z. C, Porous Silicon (World Scientific Publishing Company, River Edge, New Jersey, 1994).Google Scholar
4. Motohiro, T., Kachi, T., Mira, F. et al., in Light Emission From Silicon, edited by Iyer, S. S. and Collins, R. T., and Canham, L. T. (Mater. Res. Soc. Proc. 256, 1992) p. 53.Google Scholar
5. Kauzlarich, S. M. and Taylor, B. R. (unpublished).Google Scholar
6. Delgado, G.R., Lee, H.W.H., Kauzlarich, S.M. et al., “Observation of Quantum Confined Electron-Holes in Germanium Nanocrystals,” Phys. Rev. Lett. (submitted).Google Scholar
7. Delgado, G.R. and Lee, H.W.H., “Evolution of Si Nanicrystals Towards Quantum Confinement,” Phys. Rev. Lett. (submitted).Google Scholar
8. Hosokawa, C., Tokailin, H., Higashi, H. et al., “Transient Behavior of Organic Thin Film Electroluminescence,” Applied Physics Letters 60, 1220 (1992).Google Scholar
9. Burrows, P.E. and Forrest, S.R., “Electroluminescence from Trap-Limited Current Transport in Vacuum Deposited Organic Light Emitting Devices,” Applied Physics Letters 64, 2285 (1994).Google Scholar
10. Wu, C.C., Chun, J.K.N., Burrows, P.E. et ai, “Poly(p-phenylene vinylene)/tris(8-hydroxy) Quinoline Aluminum Heterostructure Light Emitting Diode,” Applied Physics Letters 66, 653(1995).Google Scholar