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Boron Redistribution During Transient Thermal Metal Silicide Growth on Si

Published online by Cambridge University Press:  25 February 2011

C.J. Sofield ,
R.E. Harper  and
P.J. Rosser
C.J. Sofield
Affiliation:
UKAEA Harwell, Didcot, Oxon, U.K.
R.E. Harper
Affiliation:
Dept. of Electrical Engineering, University of Surrey, Guildford, Surrey, U.K.
P.J. Rosser
Affiliation:
Standard Telecommunication Laboratory Ltd., Harlow, U.K.
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Abstract

We have used the heavy ion elastic recoil technique to study B distribution changes during Co and Ti di silicide formation on B implanted single crystal Si wafers. B diffuses to the interface of TiSi2 and Si and to the surface of CoSi2.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 35: Symposium A – Energy Beam-Solid Interactions and Transient Thermal Processing/1984 , 1984 , 445
Copyright
Copyright © Materials Research Society 1985

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References

1. Maydell - Ondrusz, E.A., Napper, R.E., Wilson, I.W. and Stephens, K.G. to be published in 'Vacuum'.Google Scholar
2. Read, P.M., Sofield, C.J., Franks, M.C., Scott, G.B., Thwaites, M.J.. Thin Solid Films, 110 (1983), 251.Google Scholar
3. Ottaviani, G.. Materials Research Society, Symposium Proceeding, Vol. 26 ed. Baglin, J.E.E., Cambell, E.R., Chu, W.K.. North Holland, New York 1984, p21.Google Scholar
4. Wach, W. and Wittmaack, K., Nucl. Instr. Met. Phys. Res. 194 (1982), 113.Google Scholar
5. Maydell-Ondrusz, E.A., Harper, R.E., Abid, A., Hemment, P.L.F. and Stephens, K.G.. Materials Research Society, Symposium Proceeding. Vol. 25 ed.Google Scholar
6. Hemment, P.L.F., Mynard, J.E., Maydell - Ondrusz, E.A. and Stephens, K.G., Proc. IV Int. Conf. on Ion Implantation Equipment and Techniques (Berchtesgadin 1982).Chow, T.P., Katz, W., and Goehner, R.. Electrochem Society, Extended Abs. Vol. 84–1.Google Scholar
8. Treatise on Solid State Chemistry Vol. 4 Reactivity of Solids Ed. Hannay, N.B., Plenum Press, New York 1986.Google Scholar
9. Fair, R.B. in 'Impurity Doping Processes in Silicon'. Ed. Wang, F.F.Y., North Holland, New York 1981, p320.Google Scholar