Article contents
Buried-shallow-implant (Bsi) process for High Efficiency Microwave power Mesfets
Published online by Cambridge University Press: 26 February 2011
Abstract
We present a hybrid implant epitaxy process that alleviates the inherent depth-width-dependent limitation of ion implantation. This technique allows shallow implants, which produce a thin active N layer with a controlled doping gradient, to be buried at an arbitrary depth below the less-critical, epitaxiallygrown surface layer. The formation and characteristics of GaAs buried shallow-implant (BSI) layers for microwave power FETs will be discussed.
- Type
- Research Article
- Information
- Copyright
- Copyright © Materials Research Society 1989
References
REFERENCES
- 1
- Cited by