Hostname: page-component-78c5997874-dh8gc Total loading time: 0 Render date: 2024-11-19T10:33:47.490Z Has data issue: false hasContentIssue false
  • English
  • Français

The Burstein-Moss Shift in Quantum Confined Infrared Materials

Published online by Cambridge University Press:  15 February 2011

Kamakeya P. Ghatak  and
Badal De
Kamakeya P. Ghatak
Affiliation:
Department of Electronics and Tele-communication Engineering, Faculty of Engineering and Technology, Jadavpur University, Calcutta - 700032, India.
Badal De
Affiliation:
96 Azalea Streeet, Paramus, NJO 7652, USA.
Get access

Abstract

In this paper we have investigated the Burstein-Moss shift in quantum wires and dots of III-V and II-VI materials on the basis of Kane and Hopfield models for the appropriate carrier dispersion laws. It is found taking Hg1−xCdxTe, In1−xGax AsyP1−y lattice matched to InP and CdS as examples that the Burstein-Moss shift exhibits oscillatory dependences for quantum wires and dots of the said materials with respect to doping and film thickness respectively. Besides, the numerical value of the same shift is greatest in quantum dots and least in quantum wires. In addition, the theoretical analysis is in agreement with the experimental datas as given elsewhere.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 299: Symposium C2 – Infrared Detectors--Materials, Processing, and Devices , 1994 , 77
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Mitra, B. and Ghatak, K.P., Physics, Letts., 137A, 413 (1989) and the references cited therein.CrossRefGoogle Scholar
2. Linch., M.T. Festkarperprobleme, 23, 227 (1983).Google Scholar
3. Ghatak, K.P. and Mondal, M., J. Appl. Phys., 69, 1666 (1991) and the references cited therein.CrossRefGoogle Scholar
4. Seeger, K., Semiconductor Physics (Springer-Verlag, Germany, 1990).Google Scholar
5. Ghatak, K.P., De, B. and Mondal, M., Phys. Stat. Sol.(b) 165, K53 (1991).CrossRefGoogle Scholar
6. Ghatak, K.P., SPIE, 1626, 372 (1992).Google Scholar
7. Ghatak, K.P. and Biswas, S.N., J. Appl. Phys. 70, 4309 (1991).CrossRefGoogle Scholar
8. Ghatak, K.P. and Mitra, B., Fizika, 21, 363 (1989).Google Scholar
9. Ghatak, K.P., Mondal, M. and Biswas, S. N., J. Appl. Phys. 68, 3032 (1990); K.P. Ghatak and M. Mondal, J. Appl. Phys. 71, 1277 (1992).CrossRefGoogle Scholar
10. Kane, E.O., J. Phys. Chem. Solids. 1, 249 (1957).CrossRefGoogle Scholar
11. Abramowitz, M. and Stegun, I.A., Handbook of Mathematical Functions (Dover, New York, 1965).Google Scholar
12. Tsidilkovskii, I.M., Karus, G.I. and Shelushinna, N.G., Adv. in Phys. 34, 43 (1985).CrossRefGoogle Scholar
13. Ghatak, K.P. and Mitra, B., Physica Scripta, 46, 182 (1992).CrossRefGoogle Scholar
14. Brandt, L.M., Kaganov, S.T. and Petroskii, I.P., J. Exp. and Theo. Phys. 150, 340 (1992).Google Scholar