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Calibration of Phosphorus Implantation Dose in Silicon by Radiochemical Neutron Activation Analysis

Published online by Cambridge University Press:  01 February 2011

Rick L. Paul  and
David S. Simons
Rick L. Paul
Affiliation:
Chemical Science and Technology Laboratory National Institute of Standards and Technology Gaithersburg, MD 20899
David S. Simons
Affiliation:
Chemical Science and Technology Laboratory National Institute of Standards and Technology Gaithersburg, MD 20899
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Abstract

A radiochemical neutron activation analysis (RNAA) procedure has been developed, critically evaluated, and shown to have the necessary sensitivity, chemical specificity, and matrix independence to certify phosphorus at ion implantation levels. 32P, produced by neutron capture of 31P, is chemically separated from the sample matrix, and measured using a beta proportional counter. Analysis of 12 pieces of a silicon wafer, implanted at a nominal dose of 8.5 x 1014 atoms·cm-2, yielded a phosphorus concentration of (8.30 ± 0.16) x 1014 atoms·cm-2 (expanded uncertainty), in agreement with a consensus value of (8.23 ± 0.33) x 1014 atoms·cm-2 (1s uncertainty) determined from a round robin SIMS investigation. The relative standard deviation of < 2 % is suitable for certification of a Standard Reference Material.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 717: Symposium C – Si Front-End Junction Formation Technologies , 2002 , C7.4
Copyright
Copyright © Materials Research Society 2002

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