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Cantilever Beam Stress Measurements During Ion Irradiation

Published online by Cambridge University Press:  21 February 2011

A. I. Van Sambeek  and
R.S. Averback
A. I. Van Sambeek
Affiliation:
University of Illinois at Urbana-Champaign, Dept. of Materials Science and Engineering, Urbana, IL 61801
R.S. Averback
Affiliation:
University of Illinois at Urbana-Champaign, Dept. of Materials Science and Engineering, Urbana, IL 61801
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Abstract

In-situ stress measurements on single crystal MgO and A1203 have been performed during ion irradiation. A cantilevered beam sample arrangement was used, with the stress in the implanted layer determined from the deflection of the sample as measured by the change in capacitance between the free end of the sample and a reference electrode. Point defect concentrations are obtained by dividing the volume strain by the defect relaxation volume, with saturation values of 0.8 to 1.2% obtained for 1.0 MeV Ne, Ar and Kr irradiations. Defect production is sublinear with dose, with an efficiency of less than 25% compared to Kinchin-Pease predictions. Ionization induced annealing is evaluated with 1.0 MeV He and 1.0 MeV H irradiations following heavy ion irradiation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 396: Symposium A – Ion-Solid Interactions for Materials Modification and Processing , 1995 , 137
Copyright
Copyright © Materials Research Society 1996

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