Hostname: page-component-7bb8b95d7b-pwrkn Total loading time: 0 Render date: 2024-09-11T21:12:47.863Z Has data issue: false hasContentIssue false
  • English
  • Français

Capacitance-Voltage Characterization of Pulsed Plasma Polymerized Allylamine Dielectrics

Published online by Cambridge University Press:  11 February 2011

Yifan Xu ,
Paul Berger ,
Jai Cho  and
Richard B. Timmons
Yifan Xu
Affiliation:
Department of Electrical Engineering, The Ohio State University, Columbus, OH 43210, USA
Paul Berger
Affiliation:
Department of Electrical Engineering, The Ohio State University, Columbus, OH 43210, USA Department of Physics, The Ohio State University, Columbus, OH 43210, USA
Jai Cho
Affiliation:
Department of Chemistry and Biochemistry, University of Texas, Arlington, TX 76019, USA
Richard B. Timmons
Affiliation:
Department of Chemistry and Biochemistry, University of Texas, Arlington, TX 76019, USA
Get access

Abstract

Polyallylamine films, deposited on Si wafers by radio frequency (RF) pulsed plasma polymerization (PPP), were employed as insulating layers of metal-insulator-semiconductor (MIS) capacitors. The insulating polymer films were deposited at substrate temperatures of 25°C and 100°C. Multiple frequency capacitance-voltage (C-V) measurements indicated that an in-situ heat treatment during film deposition increased the insulator dielectric constant. The dielectric constant, calculated from the C-V data, rose from 3.03 for samples with no heat treatment to 3.55 for samples with an in-situ heat treatment. For both sample sets, the I-V data demonstrate a low leakage current value (<20fA) up to 100V with an area of 0.0307 mm2, resulting in a current density of <0.65 pA/mm2. Hysteresis in the C-V curves with differing sweep directions was more pronounced for in-situ heat-treated samples indicative of positive mobile ions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 736: Symposium D – Electronics on Unconventional Substrates–Electrotextiles and Giant-Area Flexible Circuits , 2002 , D7.12
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Aguilar-Frutis, M., Garcia, M. and Falcony, C., Appl. Phys. Lett. 72, 1700 (1998).Google Scholar
Park, D., Cho, H., Lim, K., Lim, C., Yeo, I., Roh, J. and Park, J., J. Appl. Phys. 89, 6275 (2001).Google Scholar
Park, D., Lim, K., Cho, H., Kim, J., Yang, J., Ko, J., Yeo, I., Park, J., Waard, H. and Tuominen, M., J. Appl. Phys. 91, 65 (2002).Google Scholar
4. Schram, D.C., Kroesen, G.M.W., and Beulens, J.J., Journal of Applied Polymer Science: Applied Polymer Symposium. 46, 1 (1990).Google Scholar
5. Panchalingam, V., Chen, X., Savage, C.R., Timmons, R.B., and Eberhardt, R.C., Journal of Applied Polymer Science: Applied Polymer Symposium. 54, 123 (1993).Google Scholar
6. Schroder, D. K., Semiconductor Material And Device Characterization, (Wiley, New York, 1990).Google Scholar
7. Scheinert, S., Paasch, G., Pohlmann, S., Horhold, H. and Stockmann, R., Solid-State Electronics. 44, 845 (2000).Google Scholar
8. Gordon, B.. Semiconductor Measurement System, Model CSM/Win, Operator's Manual, Materials Development Corporation, (CA, 1996).Google Scholar
9. Nicollian, E.H. and Brews, J.R.. MOS (Metal Oxide Semiconductor) Physics and Technology, (John Wiley & Sons, Inc., New York, 1982).Google Scholar
10. Yeh, C., Chen, T., Fan, C. and Kao, J., J. Appl. Phys. 83, 1107 (1998).Google Scholar