Hostname: page-component-84b7d79bbc-fnpn6 Total loading time: 0 Render date: 2024-07-29T23:20:50.594Z Has data issue: false hasContentIssue false
  • English
  • Français

Carbon Doped Silicon Emitters Fabricated Using Limited Reaction Processing

Published online by Cambridge University Press:  28 February 2011

F.H. Ruddell ,
B.M. Armstrong ,
H.S. Gamble ,
K.B. Affolter ,
P.B. Moynagh  and
P.J. Rosser
F.H. Ruddell
Affiliation:
The Institute of Advanced Microelectronics, The Queen's University of Belfast, Ashby Building, Stranmillis Road, Belfast, BT9 5AH, Northern Ireland
B.M. Armstrong
Affiliation:
The Institute of Advanced Microelectronics, The Queen's University of Belfast, Ashby Building, Stranmillis Road, Belfast, BT9 5AH, Northern Ireland
H.S. Gamble
Affiliation:
The Institute of Advanced Microelectronics, The Queen's University of Belfast, Ashby Building, Stranmillis Road, Belfast, BT9 5AH, Northern Ireland
K.B. Affolter
Affiliation:
STC Technology Ltd., England
P.B. Moynagh
Affiliation:
STC Technology Ltd., England
P.J. Rosser
Affiliation:
STC Technology Ltd., England
Get access

Abstract

This paper describes the deposition of in-situ doped N-type silicon carbide layers in a Limited Reaction Processing (LRP) reactor. Silane/propane/ phosphine gas chemistry was used at temperatures less than 1000°C and SIMS, XPS and TEM analysis techniques aided layer characterisation. A low thermal budget deposition process (1 min at 970°C) was employed to form the emitters of Sic/Si heterojunction NPN bipolar transistors. These devices yielded a factor of two increase in emitter Gummel number compared to diffused emitters.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 198: Symposium V – Epitaxial Heterostructures , 1990 , 553
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Sugii, T. et al. , IEEE Elect. Dev. Lett. 9, 87 (1988).Google Scholar
2. Ruddell, F. et al. , Mat. Res. Soc. Symp. Proc. 146, 133 (1989).Google Scholar
3. Avila, R.E. et al. , J. Appl. Phys. 62, 3469 (1987).Google Scholar
4. Furumura, Y. et al. , J. Electrochem. Soc. 135, 1255 (1988).Google Scholar