Hostname: page-component-68945f75b7-z7ghp Total loading time: 0 Render date: 2024-08-05T13:53:51.529Z Has data issue: false hasContentIssue false
  • English
  • Français

Carbon in Crystalline Silicon

Published online by Cambridge University Press:  28 February 2011

Ronald C. Newman
Ronald C. Newman*
Affiliation:
J. J. Thomson Physical Laboratory, University of Reading, PO Box 220. Whiteknights, Reading. RG6 2AF, UK
Get access

Abstract

Early measurements are reviewed relating to the solubility. the segregation coefficient, diffusion. Internal precipitation, the infrared absorption and the effect on the lattice parameter of silicon due to substitutional carbon. Interactions with oxygen and group III Impurities are mentioned. A survey is given of the effects of high energy irradiation and heat treatments on both FZ and CZ silicon containing carbon. A rich variety of defects can form, but in general atomic structures have not been determined. The process of site switching from substitutional to interstitial locations which occurs by the selective trapping of self-Interstitials is proving to be invaluable in elucidating the mechanisms of various defect reactions, particularly those Involving oxygen Impurities.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 59: Symposium K – Oxygen, Carbon, Hydrogen and Nitrogen in Crystalline Silicon , 1985 , 403
Copyright
Copyright © Materials Research Society 1986

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. PapazIan, H. A. and Wolsky, S. P., J. Appi. Phys 27, 1561 (1956)Google Scholar
2. Newman, R. C. and Wakefield, J., Proc. lnt. Conf. on Solid State Phys. in Electron and Telecom, Brussels 1958 pp 318–28, Ed by Desirant, M. and Michiels, J. L. (Academic Press: New York) (1960).Google Scholar
3. Hall, R.N.. J.Appl.Phys. 29, 914 (1958).CrossRefGoogle Scholar
4. Dash, W.C.. J.AppI.Phys. 30, 459 (1959).CrossRefGoogle Scholar
5. Scace, R.i. and Slack, G.A.. J.Chem. Phys. 30, 1551 (1959).Google Scholar
6. Newman, R.C., Proc. Phys. Soc. London 76, 993 (1960)Google Scholar
7. Newman, R. C. and Wakefield, J.. in Metallurgy of Semiconductor Materials (Intersclence: New York) Ed. Schroeder, J. B. 15. pp 201–8 (1962); J. Phys. Chem. Solids 19, 230 (1961).Google Scholar
8. Newman, R.C., Microelectronics and Reliability 3, 121 (1964).Google Scholar
9. Charig, J.M. and Skinner, D. K.. Surface Science 5, 277 (1969).Google Scholar
10. Joyce, B.A.. Neave, J.H. and Watts, B.E., Surface Science 15, 1 (1969).CrossRefGoogle Scholar
11. Robbins, D.J., Kubiak, R.A.A. and Parker, E.H.C., J. Vac. Sci. Technol. B3, 588 (1985)Google Scholar
12. Balkanski, M., Nazarewicz, W. and Silva, E., C. R. Acad. Sci. Paris 251. 1277 (1960).Google Scholar
13. Spitzer, W.G., Kleinman, D.A. and Frosch, C.J.. Phys. Rev. 113, 133 (1959).Google Scholar
14. Newman, R. C. and Willis, J. B., J. Phys. Chem Solids 26, 373 (1965).Google Scholar
15. Johnson, F.A., Proc. Phys. Soc. London 73, 265 (1959).Google Scholar
16. Lax, M. and Burstein, E., Phys. Rev. 97, 39 (1955).Google Scholar
17. Baker, J.A., Tucker, T.N., Moyer, N.E. and Buschert, R.C., J.Appl.Phys. 39, 4365 (1968),CrossRefGoogle Scholar
18. Bond, W. L. and Kaiser, W., J. Phys. Chem. Solids 16, 44 (1960).Google Scholar
19. Newman, R.C. and Smith, R. S., J. Phys. Chem. Solids 30, 1493 (1969).Google Scholar
20. Dawber, P.G. and Elliott, R.J., Proc. Roy. Soc. A 273, 222 (1963); Proc. Phys.Soc.London 81, 453 (1963).Google Scholar
21. Newman, R.C., Infrared studies of crystal defects (London. Taylor and Francis) pp 1–187 (1973).Google Scholar
22. Nozakl, T.. Yatsurugi, Y. and Akiyama, N., J.Electrochem.Soc. 117, 1566 (1970).CrossRefGoogle Scholar
23. Endo, Y.. Yatsurugl, Y. and Aklyama, N.. Analyt. Chem. 44. 2258 (1972)Google Scholar
24. Annual Book of ASTM Standards (ASTM, Philadelphia 1981), procedure F 120 pp 543–7.Google Scholar
25. Newman, R.C. and Bean, A.R.. Rad. Effects 8, 189 (1971).Google Scholar
26. Series, R.W., Barraclugh, K. G., Hurle, D. T. J., Kemp, D. S. and Rae, G J., presented at the Electrochem. Soc. Spring Meeting, Toronto (1985) unpublished.Google Scholar
27. Jones, C.E.. Schafer, D., Scott, W., Hager, R.J., Bull. Am. Phys.Soc. 24. 276 (1979).Google Scholar
28. Baron, R., Bankus, J.P.. Allen, S.D., McGill, T.C., Young, M.H., Kimura, H., Winston, H.V. and March, H. V., Appl. Phys. Lett. 34, 257 (1979).Google Scholar
29. Hobgood, H.M., Braggins, T. T., Swartz, J. C. and Thomas, R. N.: Neutron Transmutation Doping in Semiconductors (Plenum: New York) Ed. Meese, J. M. p65 (1979)Google Scholar
30. Moyer, N. E. and Buschert, R.C., in Radiation Effects in Semiconductors Ed. by Vook, F. L., Proc. Santa Fe Conf. (Plenum: New York) p444 (1968)Google Scholar
31. Whan, R.E., Appl. Phys. Lett. 8, 131 (1966): J.AppI.Phys. 37, 2435 (1966).Google Scholar
32. Vook, F.L. and Stein, H.J., AppI.Phys. Lett. 13. 343 (1968).CrossRefGoogle Scholar
33. Bean, A.R. and Newman, R. C., Solid St. Commun.8. 175 (1970).Google Scholar
34. Watkins, G.D. and Brower, K.L., Phys. Rev. Lett. 36, 1329 (1976).CrossRefGoogle Scholar
35. Corbett, J. W., Watkins, G. D., Chrenko, R. M. and McDonald, R. S., Phys. Rev. 121. 1015 (1961).Google Scholar
36. O'Donnell, K.P., Lee, K. M. and Watkins, G. D., Physica 116B, 258 (1983)Google Scholar
37. Davies, G. LIghtowlers, E. C. and Carmo, M. Celest do, J. Phys. C: Solid St. Phys. 16, 5503 (1983).Google Scholar
38. Davies, G., Lightowlers, E. C., Carmo, M. C. do, Wilkes, J. G. and Wolstenholme, G. R, Solid St. Commun. 50, 1957 (1984).Google Scholar
39. Davies, G., Oates, A. S., Newman, R. C., Woolley, R., Lightowlers, E. C., Blnns, M. J. and Wilkes, J. G., J. Phys. C: Solid St. Phys. in press (1985).Google Scholar
40 DeLeo, G.G.. Fowler, W.B. and Watkins, G.D., Phys. Rev. B 29, 3193 (1984).CrossRefGoogle Scholar
41. Watkins, G.D., Phys. Rev. B 12, 4383 (1975).Google Scholar
42. Brelot, A., Radiation Damage and Defects in Semiconductors. Ed Whitehouse, J.E. (lOP:London) p 191 (1973).Google Scholar
43. Davies, G., Lightowlers, E.C., Woolley, R., Newman, R.C. and Oates, A.S. J. Phys. C: Solid St. Phys. 17, L499 (1984).Google Scholar
44. Davies, G., Lightowlers, E.C., Woolley, R.. Newman, R.C. and Oates, A.S. Proc. 13th Int. Conf. on Defects In Semiconductors, Eds. Klmerling, L. C. and Parsey, J. M. Jr (AIME, Warrendale Pa) p 725 (1985)Google Scholar
45. Thonke, K., Watkins, G. D. and Sauer, R., Solid State Commun. 51, 127 (1984).Google Scholar
46. Foy, C.P., Physica 116B, 276 (1983).Google Scholar
47. Oates, A.S., Newman, R.C., Woolley, R., Davies, G., Lightowlers, E.C., Blnns, M. J. and Wilkes, J. G., Appl. Phys. Lett. 47, 705 (1985).Google Scholar
48. Newman, R.C., In Neutron-Transmutation-Doped Silicon, Ed. Guldberg, J. (New York: Plenum) p 83 (1981): Rep. Prog. Phys. 45, 1163 (1982).Google Scholar
49. Stein, H. J., in Ion Implantation in Semiconductors. Proc. II Int. Conf. GarmIsch-Partenkirchen, Eds. Ruge, I. and Graul, J. (Berlin: Springer-Verlag) p2 (1971).Google Scholar
50. Borders, J.A., Picraux, S.T. and Beezhold, W., Appi.Phys. Lett. 18, 509 (1971).Google Scholar
51. Bourret, A., MRS Fall Meeting (1985).Google Scholar
52. Oates, A.S.. Newman, R.C., Tucker, J.M., Davies, G. and Lightowlers, E.C., MRS Fall Meeting (1985).Google Scholar
53. Newman, R. C., Oates, A. S. and Livingston, F. M., J. Phys. C: Solid St. Phys. 16, L667 (1983).Google Scholar
54. Oates, A. S., Newman, R.C. and Tucker, J.H.. 13th Int. Conf. on Defects In Semiconductors. Eds. Kimerling, L.C. and Parsey, J.M. Jr (AIME:New York) p 709 (1985).Google Scholar
55. Binns, A. S. Oates. M. J.. Newman, R. C., Tucker, J. H.. Wilkes, J. G. and Wilkinson, A., J.Phys.C:Solid St.Phys. 17, 5695 (1984).Google Scholar
56. Kalejs, J. P., Ladd, L. A. and Gosele, U., Appi. Phys. Lett. 45, 269 (1984)Google Scholar
57. Watkins, G. D., Radiation Damage In Semiconductors (Dunod: Paris) p 97 (1965).Google Scholar
58. Devine, S. D. and Newman, R. C., J. Phys. Chem. Solids 31, 685 (1970).Google Scholar
59. Bean, A.R. and Newman, R.C.. J. Phys. Chem. Solids 32, 1211 (1971).Google Scholar
60. Aklyama, N., Yatsurugi, Y., Endo, Y., Imayoshl, Z. and Nozaki, T.. Appl. Phys. Lett. 22 630 (1973).Google Scholar
61. Bullough, R. and Newman, R.C., Rep. Prog. Phys. 33, 101 (1970).Google Scholar
62. Bean, A. R. and Newman, R. C., J. Phys. Chem. Solids 33, 255 (1972).Google Scholar
63. Helmreich, D. and Sirti, E.. Semiconductor Silicon 1977, Proc. 3rd Int. Sym. on Silicon Mat. Scl. and Tech. Ed. Huff, H. R. and Sirti, E., (New York: Electrochem. Soc.) p 626 (1977).Google Scholar
64. Newman, R.C.. J. Phys. C: Solid St. Phys. 30, L967 (1985).Google Scholar
65. Newman, R.C., Proc MRS 46. Microscopic Identification of Electronic Defects in Semiconductors, Ed. Johnson, N. M., Bishop, S. G. and Watkins, G.D. (to be published) (1985).Google Scholar
66. Newman, R.C., Tipping, A. K. and Tucker, J. H.. J. Phys. C: Solid St. Phys. 16. L861 (1985).Google Scholar
67. Robbins, D.J., Hardeman, R.W., Gasson, D.B. and Pitt, A. D., Proc. Sym. on Reduced Temperature Processing for VLSI, Electrochem. Soc., Las Vagas Oct (1985).Google Scholar
68. Blackmore, G.W., Clegg, J. B., Hislop, J. S. and Mullin, J. B., J. Electronic Mat. 5, 401 (1976).Google Scholar
69. Series, R.W. and Barraclough, K.G., J. Cryst. Growth 60. 212 (1982).CrossRefGoogle Scholar