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Carbon Nitride (Cnx) Films Formed by Ion Implantation into Thin Carbon Films

Published online by Cambridge University Press:  21 February 2011

Imad F. Husein ,
Yuanzhong Zhou ,
Chung Chan ,
Jacob I. Kleiman ,
Yu Gudimenko  and
Ka-Ngo Leung
Imad F. Husein
Affiliation:
Plasma Science and Microelectronics Research Laboratory, Department of Electrical and Computer Engineering, Northeastern University, Boston, MA, 02115, ihusein@lynx.neu.edu
Yuanzhong Zhou
Affiliation:
Plasma Science and Microelectronics Research Laboratory, Department of Electrical and Computer Engineering, Northeastern University, Boston, MA, 02115, ihusein@lynx.neu.edu
Chung Chan
Affiliation:
Plasma Science and Microelectronics Research Laboratory, Department of Electrical and Computer Engineering, Northeastern University, Boston, MA, 02115, ihusein@lynx.neu.edu
Jacob I. Kleiman
Affiliation:
Integrity Testing Laboratory and Institute for Aerospace Studies, University of Toronto, Ontario M3H5T6, Canada
Yu Gudimenko
Affiliation:
Integrity Testing Laboratory and Institute for Aerospace Studies, University of Toronto, Ontario M3H5T6, Canada
Ka-Ngo Leung
Affiliation:
Lawrence Berkeley Laboratory, Berkeley, CA, 94720
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Abstract

Carbon nitride (CNX) films were prepared by nitrogen ion implantation into carbon films (a-C) deposited on Si substrates by the anodic vacuum arc. Plasma Immersion Ion Implantation (PIII) and Ion Beam (IB) implantation methods were used. X-ray Photoelectron Spectroscopy (XPS) C Is and N Is spectra of all CNX films indicate the formation of carbon-nitrogen bonds. The bonds are associated with the C 1s peaks at 286.6 eV and 285.6 eV , and the N 1s peaks at 399.1 eV and 400.6 eV. Raman spectra show that the structure of the implanted films (CNX) becomes more amorphous as the two broad peaks at 1577 cm-1 (G line) and 1350 cm-1 (D line) observed in the a-C films disappear and a broad asymmetric peak around 1500 cm-1 is formed. The interfacial tension between the a-C films and the substrate , obtained from the contact angle measurements, decreased by more than half after nitrogen implantation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 396: Symposium A – Ion-Solid Interactions for Materials Modification and Processing , 1995 , 255
Copyright
Copyright © Materials Research Society 1996

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