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A Carrier Lifetime Model for the Optical Degradation of Amorphous Silicon Solar Cells

Published online by Cambridge University Press:  28 February 2011

Z E. Smith  and
S. Wagner
Z E. Smith
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
S. Wagner
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
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Abstract

The light-induced performance degradation of amorphous silicon solar cells is described well by a model in which the carrier lifetimes are determined by the dangling bond density. The kinetics of the defect generation follow the model in which band-to-band recombination provides the energy for the creation of dangling bonds, which in turn introduce gap states that reduce carrier lifetime. Degradation will be slower in solar cells operating at lower excess carrier concentrations. This is documented with a comparison of degradation data for cells of different i-layer thickness, cells operating at open circuit vs. load, and for single vs. cascade cells. The model also correctly predicts the relation between short circuit current and fill factor degradation. At sufficiently long times, the efficiency will decrease at approximately the same rate for all cell structures and dimensions, with an offset in time between different device types which can be calculated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 49: Symposium F – Materials Issues in Applications of Amorphous Silicon Technology , 1985 , 331
Copyright
Copyright © Materials Research Society 1985

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