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Carrier Recombination Dynamics of InGaN/GaN LEDs and Its Applications to the Optimization of uv Generation Efficiency
Published online by Cambridge University Press: 10 February 2011
Abstract
To obtain small size high speed ultraviolet sources, we studied the UV generation process and efficiency of GaN Blue LEDs. The blue and UV emissions follow a 4-level recombination model. Depending on a given pump pulse amplitude the UV to blue generation ratio increases and saturates with the increasing of pump pulse duration. High efficiency, upto 450 μ W UV power at 380 nm, can be obtained from a 1.2 mW blue LED.
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- Copyright © Materials Research Society 1997