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Catalyst-free Growth of Large Scale Ga2O3 Nanowires
Published online by Cambridge University Press: 15 March 2011
Abstract
Large scale of straight Ga2O3 nanowires is grown on a fused silica substrate by a simple catalyst-free CVD method using Ga metal and N2 / H2O reactants. The Ga2O3 nanowires with diameters ranging from 60 to 150 nm can be as long as several micrometers. XRD and TEM analyses indicate that the Ga2O3 nanowires exhibit a monoclinic structure. PL characteristic of the Ga2O3 nanowires shows a UV emission of 375 nm at room temperature.
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- Copyright © Materials Research Society 2002