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Cathodoluminescence Spectroscopy Studies of Growth Induced Deep Levels at GaInP.
Published online by Cambridge University Press: 22 February 2011
Abstract
We report a cathodoluminescence spectroscopy study of growth-induced deep levels at GaInP epilayers grown by Molecular Beam Epitaxy under various conditions. This approach allows the identification of deep levels which appear to play an important role in the band to band radiative recombination efficiency of these GaInP films. Control of these electronic defects is crucial for the performance of visible optoelectronic devices.
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- Copyright © Materials Research Society 1994
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