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Challenges and State-of-the-Art of Oxides on SiC

Published online by Cambridge University Press:  21 March 2011

Lori Lipkin ,
Mrinal Das  and
John Palmour
Lori Lipkin
Affiliation:
Cree Inc. Durham NC 27703, U.S.A.
Mrinal Das
Affiliation:
Cree Inc. Durham NC 27703, U.S.A.
John Palmour
Affiliation:
Cree Inc. Durham NC 27703, U.S.A.
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Abstract

Single crystal SiC is a wide band-gap semiconductor with material characteristics that make it quite suitable for high voltage and high current applications. However, these devices are currently limited by their passivation. Significant improvements have been made with oxides on SiC. The most notable oxide processes are the re-oxidation anneal, a stacked ONO dielectric, and nitridation using an NO or N2O anneal. Additional improvements in lateral MOSFET mobility have been achieved using a surface channel implant, and lower temperature implant activation anneals. However, the passivation remains a significant limitation for SiC power devices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 640: Symposium H – Silicon Carbide-Materials, Processing, and Devices , 2000 , H3.1
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

1. Nicollian, E. H. and Brews, J.R., MOS (Metal Oxide Semiconductor) Physics and Technology, Wiley Interscience (1982).Google Scholar
2. 17. Lipkin, L.A. and Palmour, J.W., ”Improved Oxidation Procedures for Reduced SiO2/SiC Defects”, J. of Electronic Mat., 25(5), 909–915 (1996).Google Scholar
3. Lipkin, L.A. and Palmour, J.W. “Metal-Insulator-SiC Devices with Improved Reliability”, IEEE Trans. on Electron Dev., Vols. 46 p. 525 (1999)Google Scholar
4. Li, H.F., Dimitrijev, S., Harrison, H.B., Sweatman, D., and Tanner, P.T. “Improving SiO2 Grown on P-Type 4H-SiC by NO Annealing”, Materials Science Forum Vols. 264–268 (1998) pp. 869.Google Scholar
5. This conference, and Das, M.K., Lipkin, L.A., Palmour, J.W., Chung, G.Y., Williams, J.R., McDonald, K., and Feldman, L.C., ”High Mobility 4H-SiC Inversion Mode MOSFETs Using Thermally Grown, NO Annealed SiO2”, IEEE Device Research Conf., Denver CO, June 2000 Google Scholar