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Channeling Investigation of the Lattice Location of Ti in Ti-Implanted Optical Waveguides in LiNbO3

Published online by Cambridge University Press:  26 February 2011

Ch. Buchal
Affiliation:
IFF/KFA, D-5170 Jülich, W. Germany
S. Mantl
Affiliation:
IFF/KFA, D-5170 Jülich, W. Germany
D. K. Thomas
Affiliation:
Solid State Div., ORNL, Oak Ridge, TN 37831
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Abstract

Ion channeling of 3 MeV He ions has been employed to investigate the lattice location of Ti in Ti implanted optical waveguides in LiNbO3 after Solid Phase Epitaxy. Particle-Induced X-rays (PIXE) from Ti at 4.5 keY (K) and Nb at 2.2 keV (L∝β) and 16.6 keV (K) have been detected and analyzed simultaneously.

All scans yield similar behaviour of the Ti and the Nb signals. This provides clear evidence, that within well annealed implanted waveguides the Ti4+ and the Nb5+ ions occupy equivalent lattice positions.

Type
Research Article
Copyright
Copyright © Materials Research Society 1988

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References

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