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Characterisaticn of Defects in Silicon by Transmission Electron Microscopy after CMOS and Bipolar Processing

Published online by Cambridge University Press:  28 February 2011

J W Steeds ,
F Johnson ,
M B Simpson  and
P D Augustus
J W Steeds
Affiliation:
H H Wills Physics Laboratory, University of Bristol, Bristol BS8 lTL, United Kingcan
F Johnson
Affiliation:
H H Wills Physics Laboratory, University of Bristol, Bristol BS8 lTL, United Kingcan
M B Simpson
Affiliation:
GEC Hirst Research Centre, East Lane, Wembley, Middlesex HA9 7PP, United Kingdon
P D Augustus
Affiliation:
Plessy Research (Caswell) Limited, Allen Clark Research Centre, Towcester, Northants NN12 8EQ, United Kingdom
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Abstract

Transmission electron microscopy at 300kV has been used in a thorough examination of CMO3 and bipolar processed wafers of Czochralski silicon. Diffraction contrast and tilting experiments have been performed on the defects which were observed and a number of new observations have been made on stacking faults and {001} platelets induced by oxygen precipitation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 138: Symposium Q – Characterization of the Structure and Chemistry of Defects in Materials , 1988 , 245
Copyright
Copyright © Materials Research Society 1989

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References

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