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Characteristics of Polycrystalline Copper Films Made by CVD from Cu(HFA)2

Published online by Cambridge University Press:  25 February 2011

Do-Heyoung Kim ,
Robert H. Wentorf  and
William N. Gill
Do-Heyoung Kim
Affiliation:
Department of Chemical Engineering, Rensselaer Polytechnic Institute, Troy, NY 12180.
Robert H. Wentorf
Affiliation:
Department of Chemical Engineering, Rensselaer Polytechnic Institute, Troy, NY 12180.
William N. Gill
Affiliation:
Department of Chemical Engineering, Rensselaer Polytechnic Institute, Troy, NY 12180.
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Abstract

Thin Copper films have been deposited on various substrates by the reduction of copper bis-hexafluoroacetylacetonate, Cu(HFA)2, with hydrogen to investigate the characteristics of the films made at 2–10 torr of total pressure, substrate temperatures of 280–400 °C and precursor temperatures of 55–90 °C. Under the conditions investigated, the highest growth rate was 650 Å/min. and the resistivity of the films was routinely near 2.0 μΩ-cm at 5000 Å or more thickness. Film growth rate depended on precursor concentration and substrate temperature. RBS and AES analysis indicate that the copper deposited at 310–400°C is highly pure. SEM photographs revealed that different structures form depending on substrate kind, the deposition conditions and the deposition time. The surface roughness of the films increased with increasing thickness. The reflectivity of the copper films depends on their thickness and decreases as the grain size increases. The grain sizes in the films were about 0.1–2.0 μm and are correlated with film thickness.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 260: Symposium C – Advanced Metallization and Processing for Semiconductor Devices and Circuits , 1992 , 107
Copyright
Copyright © Materials Research Society 1992

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References

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