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Characteristics of Recrystallised Polysilicon on SiO2 Produced by Dual Electron Beam Processing
Published online by Cambridge University Press: 15 February 2011
Abstract
This paper describes the production of large areas of precisely oriented, defect-free, single crystal silicon films on SiO2 by dual electron beam heating of deposited polysilicon using lateral epitaxy. Defects which occur in the film far from the seeding window are characterised, and the dependence of the area of the defect-free region on the processing conditions is discussed.
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- Copyright © Materials Research Society 1983
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