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Characteristics of Thin Layers of SiO2 Fabricated by Rapid Thermal Oxidation
Published online by Cambridge University Press: 28 February 2011
Abstract
Thin layers of SiO2 (60-300 Å) were fabricated by rapid thermal oxidation (RTO). Growth rate on (100) and (111) Si was determined. Two different high-temperature anneal cycles were used to reduce the interface state density. Work function difference between metal and semiconductor depends upon technology and can be attributed to the changes in Si-SiO2 barrier height.
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- Copyright © Materials Research Society 1987
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