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Characterization of Defects in N-Type 6H-SiC Single Crystals by Optical Admittance Spectroscopy
Published online by Cambridge University Press: 21 February 2011
Abstract
Optical admittance spectroscopy is a technique for measuring the conductance and capacitance of a junction under illumination as a function of the wavelength of the light and the frequency of the measuring AC signal. This technique has been applied to characterize deep defect levels in 6H-SiC:N. Nitrogen is a donor atom in 6H-SiC which substitutes for carbon in three inequivalent sites (h, k1, k2). giving rise to n-type conduction. Deep defect levels attributable to transition metal impurities have also been identified in 6H-SiC:N. We have examined persistent photoconductance in this material by optical admittance spectroscopy.
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- Copyright © Materials Research Society 1994
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