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Characterization Of Er-Doped III-V Nitride Epilayers Prepared by Mombe

Published online by Cambridge University Press:  10 February 2011

J. M. Zavada ,
R. G. Wilson ,
R. N. Schwartz ,
J. D. MacKenzie ,
C. R. Abernathy ,
S. J. Pearton ,
X. Wu  and
U. Hömmerich
J. M. Zavada
Affiliation:
U.S. Army Research Office, Research Triangle Park, NC 27709
R. G. Wilson
Affiliation:
Hughes Research Laboratories, Malibu, CA 90265
R. N. Schwartz
Affiliation:
Hughes Research Laboratories, Malibu, CA 90265
J. D. MacKenzie
Affiliation:
MSE Department, University of Florida, Gainesville, FL 32611
C. R. Abernathy
Affiliation:
MSE Department, University of Florida, Gainesville, FL 32611
S. J. Pearton
Affiliation:
MSE Department, University of Florida, Gainesville, FL 32611
X. Wu
Affiliation:
Hampton University, Research Center for Optics, Department of Physics, Hampton, VA 23668
U. Hömmerich
Affiliation:
Hampton University, Research Center for Optics, Department of Physics, Hampton, VA 23668
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Abstract

Er-doped AIN epilayers have been grown using metal-organic molecular beam epitaxy (MOMBE) with controlled Er densities. Cell temperatures greater than 1000°C were required for the Er solid source in order to achieve significant Er concentrations in the epilayers. Er densities in the 1019 to 1020 cm−3 range were confirmed using secondary ion mass spectrometry (SIMS), quantified using implanted standards. The epilayers were optically excited using an argon-ion laser and infrared luminescence spectra were measured over the temperature range 13 to 300 K. The spectra are centered at 1.54 μm and display features typical of the Er3+ configuration. These data demonstrate that high densities of Er atoms can be incorporated in AIN films during epitaxial growth and that the Er atoms give rise to the intra-4f transitions of the trivalent Er3+ ion.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 422: Symposium D – Rare-Earth Doped Semiconductors II , 1996 , 193
Copyright
Copyright © Materials Research Society 1996

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