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Characterization of Interfacial Structure of InGaAs/InP Short Period Superlattices by Raman Scattering and High Resolution X-Ray Diffraction

Published online by Cambridge University Press:  22 February 2011

Teruo Mozume
Teruo Mozume*
Affiliation:
Central Research Laboratory, Hitachi Ltd., Kokubunji, Tokyo 185, Japan
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Abstract

The x-ray diffraction (XRD) of InGaAs/InP short-period superlattices (SPSL's) grown on (001)InP substrates by gas source molecular beam epitaxy (GSMBE) and by gas source migration enhanced epitaxy (GSMEE) shows that the GSMBE grown SPSL is strain free, and that GSMEE grown SPSL's with InGa-P and In-As heterointerfaces have strain-induced zerothorder satellite peak shift consistent with that in simulation results for the InGaAs/InP SPSL with one monolayer of InGaP and InAs inserted in each interface. Partial destruction of the long-range order is confirmed by the observation of the extra diffraction peak in GSMBE grown SPSL and by weak intensity of satellite peaks and nonuniform spacing between satellite peaks in GSMEE grown SPSL's. Raman scattering shows that the strain is accommodated in the interface layer in GSMEE grown samples. A confinement model without interface disorder fits the GaAs LO phonon very well. These results indicate that the local atomic arrangements are tailored by GSMEE, but that long range-order is impaired by the misfit dislocations in GSMEE grown SPSL's and by the exchange between As to P at the interfaces in GSMBE grown SPSL.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 324: Symposium K – Diagnostic Techniques for Semiconductor Materials Processing , 1993 , 285
Copyright
Copyright © Materials Research Society 1994

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