Hostname: page-component-77c89778f8-m8s7h Total loading time: 0 Render date: 2024-07-20T06:29:44.834Z Has data issue: false hasContentIssue false
  • English
  • Français

Characterization of Metal/A1xIn1-xN Interface Thermal Stability and Electrical Properties

Published online by Cambridge University Press:  10 February 2011

Guohua Qiu ,
Fen Chen ,
J. O. Olowolafe ,
C. P. Swann ,
K. M. Unruh  and
D. S. Holmes
Guohua Qiu
Affiliation:
Department of Electrical Engineering, University of Delaware, Newark, DE 19716
Fen Chen
Affiliation:
Department of Electrical Engineering, University of Delaware, Newark, DE 19716
J. O. Olowolafe
Affiliation:
Department of Electrical Engineering, University of Delaware, Newark, DE 19716
C. P. Swann
Affiliation:
Department of Physics and Astronomy, University of Delaware, Newark, DE 19716
K. M. Unruh
Affiliation:
Department of Physics and Astronomy, University of Delaware, Newark, DE 19716
D. S. Holmes
Affiliation:
Lake Shore Cysotronics, Inc., 64 East Walnut Street, Westerville, Ohio 43081–2399
Get access

Abstract

The interfaces between metals and semiconductors are very crucial to the performance and reliability of solid-state devices. At the moment information on the interfaces between metals and group III-nitride semiconductors are very rare. In this study, linear I-V characteristics of titanium and aluminum to A1xIn1-xN of three different composition (x=0.18, 0.50,0.85) were obtained exhibiting ohmic characteristics. Specific contact resistance of these metals to A1.18In.82N and Al.5In.5N was measured by transmission line measurement. Interdiffusion between the metals and the semiconductors, induced by annealing in N2 ambient, was determined using RBS and thermal stability was evaluated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 1073
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Strite, S. and Morkoc, H., J.Vac.Sci.Technol., B10(1992), 1237 Google Scholar
2. Foresi, J.S. and Moustakas, T.D., Appl.Phys.Lett., 62(1993), 2859 Google Scholar
3. Lin, M.E., Ma, Z., Huang, F.Y., Fan, Z.F., Allen, L.H., and Morkoc, H., Appl.Phys.Lett., 64(1994), 1003 Google Scholar
4. Chan, J.S., Fu, T.C., Cheung, N.W., Newman, N., Liu, X., Ross, J.T.. Rubin, M.D., and Chu, P., Mat.Res.Soc.Symp.Proc., Vol.339(1994), 223 Google Scholar
5. Qiu, G., Olowolafe, O., Unruh, K., Peng, T., Swann, C., and Piprek, J., in this proceedingGoogle Scholar
6. Berger, H.H., Solid-State Electron. 15(1972), 145 Google Scholar