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Characterization of Metal/Si1-xGex/Si Diodes Fabricated by Cryogenic Processing

Published online by Cambridge University Press:  15 February 2011

L. He ,
E. Li ,
Z.Q. Shi ,
R.L. Jiang ,
J. L. Liu ,
Y. Shi  and
Y.D. Zheng
L. He
Affiliation:
Department of Electrical Engineering, Northern Illinois University, DeKalb, IL
E. Li
Affiliation:
Department of Electrical Engineering, Northern Illinois University, DeKalb, IL
Z.Q. Shi
Affiliation:
NEOCERA, Inc., College Park, MD
R.L. Jiang
Affiliation:
Department of Physics, Nanjing University, Nanjing 210008, P.R.China
J. L. Liu
Affiliation:
Department of Physics, Nanjing University, Nanjing 210008, P.R.China
Y. Shi
Affiliation:
Department of Physics, Nanjing University, Nanjing 210008, P.R.China
Y.D. Zheng
Affiliation:
Department of Physics, Nanjing University, Nanjing 210008, P.R.China
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Abstract

Schottky diodes were fabricated by evaporating metal thin layers on p-Si1-xGex by cryogenic processing. The cryogenic processing, with substrate temperature cooled to as low as 77K (LT), has been successfully used to enhance metal/III-V semiconductor Schottky barrier height[1]. The electrical characteristics of the diodes were investigated by current-voltage (IV) and current-temperature (I-T) measurements. In order to study the effect of silicide formation on diode characteristics, furnace annealing was performed in nitrogen atmosphere at 450°C and 550°C, respectively. Two kinds of samples with gemanium composition x of 0.17 and 0.20 were used. The electrical characteristics showed the barrier height фB decreased with the increase of the gemanium composition. The annealing temperatures up till to 550°C did not affect the I-V characteristics at room temperature, however, the conduction mechanism showed obvious difference comparing to the as-deposited diodes by I-V-T analysis. For Pd as Schottky metal, very similar results were obtained for the LT as-deposited diodes and the ordinary room temperature (RT) deposited diodes after 550° annealing, they both showed thermionic emission dominated conduction mechanism.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 379: Symposium C – Strained Layer Epitaxy–Materials, Processing, and Devise Applications , 1995 , 121
Copyright
Copyright © Materials Research Society 1995

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References

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