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Characterization of Porous SiC Substrates and of the Epilayer Structures Grown on Them

Published online by Cambridge University Press:  11 February 2011

Balaji Raghothamachar ,
Jie Bai ,
William M. Vetter ,
Perena Gouma ,
Michael Dudley ,
Marina Mynbaeva ,
Matthew T. Smith  and
Stephen E. Saddow
Balaji Raghothamachar
Affiliation:
Department of Materials Science & Engineering, SUNY at Stony Brook, Stony Brook, NY, 11794–2275, U.S.A.
Jie Bai
Affiliation:
Department of Materials Science & Engineering, SUNY at Stony Brook, Stony Brook, NY, 11794–2275, U.S.A.
William M. Vetter
Affiliation:
Department of Materials Science & Engineering, SUNY at Stony Brook, Stony Brook, NY, 11794–2275, U.S.A.
Perena Gouma
Affiliation:
Department of Materials Science & Engineering, SUNY at Stony Brook, Stony Brook, NY, 11794–2275, U.S.A.
Michael Dudley
Affiliation:
Department of Materials Science & Engineering, SUNY at Stony Brook, Stony Brook, NY, 11794–2275, U.S.A.
Marina Mynbaeva
Affiliation:
A. F. Ioffe Physico-Technical Institute, St. Petersburg 194021, Russia
Matthew T. Smith
Affiliation:
Center for Microelectronics Research, University of South Florida, Tampa, FL 33620, U.S.A.
Stephen E. Saddow
Affiliation:
Center for Microelectronics Research, University of South Florida, Tampa, FL 33620, U.S.A.
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Abstract

Porous 6H-SiC and 4H-SiC wafers formed by anodization have been characterized in this study prior to and following the CVD deposition of SiC epitaxial layers, using a combination of synchrotron white beam x-ray topography (SWBXT), SEM, TEM and optical microscopy. Under the high temperatures employed during epitaxial growth, a significant change in pore morphology occurs. While no evidence of reduced screw dislocation density in the epilayers is obtained, a small tilt of the epilayers with respect to the porous substrate observed on x-ray topographs could play a role in limiting penetration of defects from the substrate.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 742: Symposium K – Silicon Carbide-Materials, Processing, and Devices , 2002 , K2.11
Copyright
Copyright © Materials Research Society 2003

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References

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